AON6908A
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON6908A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 31(78)
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20(12)
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 46(80)
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 9.5(6)
nS
Cossⓘ -
Output Capacitance: 380(490)
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0089(0.0036)
Ohm
Package: DFN5X6B
AON6908A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6908A
Datasheet (PDF)
..1. Size:431K aosemi
aon6908a.pdf
AON6908A30V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6908A is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 46A 80AMOSFETs in a dual Power DFN5x6 package. The Q1 "High RDS(ON) (at VGS=10V)
7.1. Size:471K aosemi
aon6908.pdf
AON690830V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6908 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 46A 80AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)
8.1. Size:562K aosemi
aon6906.pdf
AON690630V Dual Asymmetric N-Channel MOSFETGeneral Description Product Summary Q2The AON6906 is designed to provide a high efficiency Q1synchronous buck power stage with optimal layout and board VDS 30V 30Vspace utilization.It includes two specialized MOSFETs in a dual 48A ID (at VGS=10V)37APower DFN5x6A package. The Q1 "High Side" MOSFET is
8.2. Size:370K aosemi
aon6906a.pdf
AON6906A30V Dual Asymmetric N-Channel MOSFETGeneral Description Product Summary Q2The AON6906A is designed to provide a high efficiency Q1synchronous buck power stage with optimal layout and board VDS 30V 30Vspace utilization.It includes two specialized MOSFETs in a dual 48A ID (at VGS=10V)37APower DFN5x6A package. The Q1 "High Side" MOSFET is
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