AON6926 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AON6926
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31(35) W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 44(50) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 2(4) nS
   Cossⓘ - Capacitancia de salida: 180(465) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011(0.0085) Ohm
   Paquete / Cubierta: DFN5X6B

Búsqueda de reemplazo de MOSFET AON6926

AON6926 Datasheet (PDF)

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aon6926.pdf

AON692630V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ2Q1The AON6926 is designed to provide a high efficiency 30Vsynchronous buck power stage with optimal layout and VDS 30Vboard space utilization. It includes two specialized 50A ID (at VGS=10V)44AMOSFETs in a dual Power DFN5x6A package. The Q1

8.1. Size:434K aosemi
aon6924.pdf

AON692430V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6924 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 60A 85AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)

8.2. Size:387K aosemi
aon6922.pdf

AON692225V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6922 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 25V 25Vboard space utilization. It includes two specialized ID (at VGS=10V) 71A 85AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)

8.3. Size:394K aosemi
aon6920.pdf

AON692030V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6920 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 60A 85AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)

8.4. Size:601K aosemi
aon6928.pdf

AON692830V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 30A 36A High Current Capability RDS(ON) (at VGS=10V)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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