All MOSFET. AON6926 Datasheet

 

AON6926 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AON6926
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31(35) W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 44(50) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 2(4) nS
   Cossⓘ - Output Capacitance: 180(465) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011(0.0085) Ohm
   Package: DFN5X6B

 AON6926 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON6926 Datasheet (PDF)

 ..1. Size:369K  aosemi
 aon6926.pdf

AON6926 AON6926

AON692630V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ2Q1The AON6926 is designed to provide a high efficiency 30Vsynchronous buck power stage with optimal layout and VDS 30Vboard space utilization. It includes two specialized 50A ID (at VGS=10V)44AMOSFETs in a dual Power DFN5x6A package. The Q1

 8.1. Size:434K  aosemi
 aon6924.pdf

AON6926 AON6926

AON692430V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6924 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 60A 85AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)

 8.2. Size:387K  aosemi
 aon6922.pdf

AON6926 AON6926

AON692225V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6922 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 25V 25Vboard space utilization. It includes two specialized ID (at VGS=10V) 71A 85AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)

 8.3. Size:394K  aosemi
 aon6920.pdf

AON6926 AON6926

AON692030V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6920 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 60A 85AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)

 8.4. Size:601K  aosemi
 aon6928.pdf

AON6926 AON6926

AON692830V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 30A 36A High Current Capability RDS(ON) (at VGS=10V)

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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