AON6928 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AON692830V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 30A 36A High Current Capability RDS(ON) (at VGS=10V)

AON692430V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6924 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 60A 85AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)

AON692630V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ2Q1The AON6926 is designed to provide a high efficiency 30Vsynchronous buck power stage with optimal layout and VDS 30Vboard space utilization. It includes two specialized 50A ID (at VGS=10V)44AMOSFETs in a dual Power DFN5x6A package. The Q1

AON692225V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6922 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 25V 25Vboard space utilization. It includes two specialized ID (at VGS=10V) 71A 85AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)

AON692030V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6920 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 60A 85AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)