AON6928 MOSFET Datasheet: N-Ch, 30V, 30(36)A. Full specification with pinout and replacement list

AON6928 Specs and Replacement

Type Designator: AON6928

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31(33) W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30(36) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2(4) nS

Cossⓘ - Output Capacitance: 180(898) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0082(0.0029) Ohm

Package: DFN5X6B

AON6928 substitution

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AON6928 datasheet

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AON6928 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 30A 36A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒

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AON6926 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 Q1 The AON6926 is designed to provide a high efficiency 30V synchronous buck power stage with optimal layout and VDS 30V board space utilization. It includes two specialized 50A ID (at VGS=10V) 44A MOSFETs in a dual Power DFN5x6A package. The Q1 ... See More ⇒

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AON6922 25V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6922 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 25V 25V board space utilization. It includes two specialized ID (at VGS=10V) 71A 85A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V) ... See More ⇒