AON6932A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6932A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31(78) W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 28(42) A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.3(5) nS
Cossⓘ - Capacitancia de salida: 441(1327) pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005(0.0025) Ohm
Paquete / Cubierta: DFN5X6B
Búsqueda de reemplazo de AON6932A MOSFET
AON6932A Datasheet (PDF)
aon6932a.pdf
AON6932A30V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 42A High Current Capability RDS(ON) (at VGS=10V)
aon6932.pdf
AON693230V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 42A High Current Capability RDS(ON) (at VGS=10V)
aon6936.pdf
AON693630V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 32A 44A High Current Capability RDS(ON) (at VGS=10V)
aon6934.pdf
AON693430V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 36A High Current Capability RDS(ON) (at VGS=10V)
Otros transistores... AON6910A , AON6912A , AON6918 , AON6920 , AON6922 , AON6924 , AON6926 , AON6928 , IRF730 , AON6934A , AON6936 , AON6938 , AON6946 , AON6970 , AON6973A , AON6974A , AON6978 .
History: P5003QVT
History: P5003QVT
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