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AON6932A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AON6932A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 31(78) W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 28(42) A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 3.3(5) ns
   Cossⓘ - Выходная емкость: 441(1327) pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.005(0.0025) Ohm
   Тип корпуса: DFN5X6B

 Аналог (замена) для AON6932A

 

 

AON6932A Datasheet (PDF)

 ..1. Size:616K  aosemi
 aon6932a.pdf

AON6932A AON6932A

AON6932A30V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 42A High Current Capability RDS(ON) (at VGS=10V)

 7.1. Size:503K  aosemi
 aon6932.pdf

AON6932A AON6932A

AON693230V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 42A High Current Capability RDS(ON) (at VGS=10V)

 8.1. Size:705K  aosemi
 aon6936.pdf

AON6932A AON6932A

AON693630V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 32A 44A High Current Capability RDS(ON) (at VGS=10V)

 8.2. Size:520K  aosemi
 aon6934.pdf

AON6932A AON6932A

AON693430V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 36A High Current Capability RDS(ON) (at VGS=10V)

 8.3. Size:551K  aosemi
 aon6938.pdf

AON6932A AON6932A

AON693830V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 30A 42A High Current Capability RDS(ON) (at VGS=10V)

 8.4. Size:633K  aosemi
 aon6934a.pdf

AON6932A AON6932A

AON6934A30V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 36A High Current Capability RDS(ON) (at VGS=10V)

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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