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2N6660JAN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N6660JAN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 6.25 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 2 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Conductancia de drenaje-sustrato (Cd): 50 pF
   Resistencia entre drenaje y fuente RDS(on): 3 Ohm
   Paquete / Cubierta: TO39

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2N6660JAN Datasheet (PDF)

 8.1. Size:125K  vishay
2n6660-2.pdf

2N6660JAN
2N6660JAN

2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXVwww.vishay.comVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Military QualifiedVDS (V) 60 Low On-Resistence: 1.3 RDS(on) () at VGS = 10 V 3 Low Threshold: 1.7 VConfiguration Single Low Input Capacitance: 35 pF Fast Switching Speed: 8 ns Low Input and Output LeakageTO-205AD(TO-3

 8.2. Size:527K  supertex
2n6660.pdf

2N6660JAN
2N6660JAN

Supertex inc. 2N6660N-Channel Enhancement-ModeVertical DMOS FETFeaturesGeneral DescriptionThe Supertex 2N6660 is an enhancement-mode (normally- Free from secondary breakdownoff) transistor that utilizes a vertical DMOS structure and Low power drive requirementSupertexs well-proven silicon-gate manufacturing process. Ease of parallelingThis combination produ

 8.3. Size:21K  supertex
2n6660 2n6661.pdf

2N6660JAN
2N6660JAN

2N66602N6661N-Channel Enhancement-ModeVertical DMOS FETsOrdering InformationOrder Number / PackageBVDSS /RDS(ON) ID(ON)BVDGS (max) (min) TO-3960V 3.0 1.5A 2N666090V 4.0 1.5A 2N6661High Reliability Devices Advanced DMOS TechnologySee pages 5-4 and 5-5 for MILITARY STANDARD ProcessThese enhancement-mode (normally-off) transistors utilize aFlows and Ordering Informa

 8.4. Size:42K  no
2n6656-59 2n6660-61.pdf

2N6660JAN

 8.5. Size:129K  semelab
2n6660csm4.pdf

2N6660JAN
2N6660JAN

2N6660CSM4 MECHANICAL DATA NCHANNEL Dimensions in mm (inches) 1.40 0.155.59 0.13(0.055 0.006) ENHANCEMENT MODE (0.22 0.005)0.25 0.03(0.01 0.001)MOSFET 0.23rad.(0.009)V 60VDSS3 2I 1.0AD0.234 1min.(0.009)R 3.0 DS(on)1.02 0.20 2.03 0.20FEATURES (0.04 0.008) (0.08 0.008) Faster switching Low Ciss

 8.6. Size:236K  semelab
2n6660c4a.pdf

2N6660JAN
2N6660JAN

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660C4 VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0 Fast Switching Low Threshold Voltage (Logic Level) Low CISS Integral Source-Drain Body Diode Hermetic Surface Mounted Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source V

Otros transistores... 2N5486 , 2N6656 , 2N6657 , 2N6658 , 2N6659 , 2N6659-LCC4 , 2N6659-SM , 2N6660 , IRF1010E , 2N6660JANTX , 2N6660JANTXV , 2N6660-LCC4 , 2N6660-SM , 2N6661 , 2N6661-220M , 2N6661JAN , 2N6661JANTX .

 

 
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