2N6660JAN Datasheet: MOSFET, N-Ch, 60V, 2A. Full specification with pinout and replacement list

2N6660JAN Datasheet. Specs and Replacement

Type Designator: 2N6660JAN 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO39

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2N6660JAN substitution

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2N6660JAN datasheet

8.1. Size:125K vishay
2n6660-2.pdf pdf_icon

2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Military Qualified VDS (V) 60 Low On-Resistence 1.3 RDS(on) ( ) at VGS = 10 V 3 Low Threshold 1.7 V Configuration Single Low Input Capacitance 35 pF Fast Switching Speed 8 ns Low Input and Output Leakage TO-205AD (TO-3... See More ⇒

8.2. Size:527K supertex
2n6660.pdf pdf_icon

Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6660 is an enhancement-mode (normally- Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure and Low power drive requirement Supertex s well-proven silicon-gate manufacturing process. Ease of paralleling This combination produ... See More ⇒

8.3. Size:21K supertex
2n6660 2n6661.pdf pdf_icon

2N6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS /RDS(ON) ID(ON) BVDGS (max) (min) TO-39 60V 3.0 1.5A 2N6660 90V 4.0 1.5A 2N6661 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process These enhancement-mode (normally-off) transistors utilize a Flows and Ordering Informa... See More ⇒

8.4. Size:42K no
2n6656-59 2n6660-61.pdf pdf_icon