All MOSFET. 2N6660JAN Datasheet

 

2N6660JAN MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N6660JAN

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 6.25 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 50 pF

Maximum Drain-Source On-State Resistance (Rds): 3 Ohm

Package: TO39

2N6660JAN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N6660JAN Datasheet (PDF)

8.1. 2n6660-2.pdf Size:125K _vishay

2N6660JAN
2N6660JAN

2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Military Qualified VDS (V) 60 • Low On-Resistence: 1.3  RDS(on) () at VGS = 10 V 3 • Low Threshold: 1.7 V Configuration Single • Low Input Capacitance: 35 pF • Fast Switching Speed: 8 ns • Low Input and Output Leakage TO-205AD (TO-3

8.2. 2n6660.pdf Size:527K _supertex

2N6660JAN
2N6660JAN

Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6660 is an enhancement-mode (normally- ► Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure and ► Low power drive requirement Supertex’s well-proven silicon-gate manufacturing process. ► Ease of paralleling This combination produ

 8.3. 2n6660 2n6661.pdf Size:21K _supertex

2N6660JAN
2N6660JAN

2N6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS /RDS(ON) ID(ON) BVDGS (max) (min) TO-39 60V 3.0Ω 1.5A 2N6660 90V 4.0Ω 1.5A 2N6661 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process These enhancement-mode (normally-off) transistors utilize a Flows and Ordering Informa

8.4. 2n6656-59 2n6660-61.pdf Size:42K _no

2N6660JAN



 8.5. 2n6660c4a.pdf Size:236K _semelab

2N6660JAN
2N6660JAN

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660C4 • VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low CISS • Integral Source-Drain Body Diode • Hermetic Surface Mounted Package • High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS Drain – Source V

8.6. 2n6660csm4.pdf Size:129K _semelab

2N6660JAN
2N6660JAN

2N6660CSM4 MECHANICAL DATA N–CHANNEL Dimensions in mm (inches) 1.40 ± 0.15 5.59 ± 0.13 (0.055 ± 0.006) ENHANCEMENT MODE (0.22 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) MOSFET 0.23 rad. (0.009) V 60V DSS 3 2 I 1.0A D 0.23 4 1 min. (0.009) R 3.0Ω DS(on) 1.02 ± 0.20 2.03 ± 0.20 FEATURES (0.04 ± 0.008) (0.08 ± 0.008) • Faster switching • Low Ciss

Datasheet: 2N5486 , 2N6656 , 2N6657 , 2N6658 , 2N6659 , 2N6659-LCC4 , 2N6659-SM , 2N6660 , IRFP450 , 2N6660JANTX , 2N6660JANTXV , 2N6660-LCC4 , 2N6660-SM , 2N6661 , 2N6661-220M , 2N6661JAN , 2N6661JANTX .

 

 
Back to Top