All MOSFET. 2N6660JAN Datasheet


2N6660JAN MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N6660JAN

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 6.25 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 ┬░C

Drain-Source Capacitance (Cd): 50 pF

Maximum Drain-Source On-State Resistance (Rds): 3 Ohm

Package: TO39

2N6660JAN Transistor Equivalent Substitute - MOSFET Cross-Reference Search


2N6660JAN Datasheet (PDF)

4.1. 2n6660.pdf Size:527K _supertex


Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6660 is an enhancement-mode (normally- > Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure and > Low power drive requirement Supertexĺs well-proven silicon-gate manufacturing process. > Ease of paralleling This combination produces a devic

4.2. 2n6660 2n6661.pdf Size:21K _supertex


2N6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS /RDS(ON) ID(ON) BVDGS (max) (min) TO-39 60V 3.0? 1.5A 2N6660 90V 4.0? 1.5A 2N6661 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process These enhancement-mode (normally-off) transistors utilize a Flows and Ordering Information.

 4.3. 2n6656-59 2n6660-61.pdf Size:42K _no



Datasheet: 2N5486 , 2N6656 , 2N6657 , 2N6658 , 2N6659 , 2N6659-LCC4 , 2N6659-SM , 2N6660 , IRFP450 , 2N6660JANTX , 2N6660JANTXV , 2N6660-LCC4 , 2N6660-SM , 2N6661 , 2N6661-220M , 2N6661JAN , 2N6661JANTX .

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