AON6938 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6938
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31(78) W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 30(42) A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2(5.2) nS
Cossⓘ - Capacitancia de salida: 180(1204) pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0082(0.0022) Ohm
Encapsulados: DFN5X6B
Búsqueda de reemplazo de AON6938 MOSFET
- Selecciónⓘ de transistores por parámetros
AON6938 datasheet
aon6938.pdf
AON6938 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 30A 42A High Current Capability RDS(ON) (at VGS=10V)
aon6936.pdf
AON6936 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 32A 44A High Current Capability RDS(ON) (at VGS=10V)
aon6934.pdf
AON6934 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 36A High Current Capability RDS(ON) (at VGS=10V)
aon6932.pdf
AON6932 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 42A High Current Capability RDS(ON) (at VGS=10V)
Otros transistores... AON6920, AON6922, AON6924, AON6926, AON6928, AON6932A, AON6934A, AON6936, IRF740, AON6946, AON6970, AON6973A, AON6974A, AON6978, AON6980, AON7200, AON7210
History: AON6946
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