All MOSFET. AON6938 Datasheet

 

AON6938 Datasheet and Replacement


   Type Designator: AON6938
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31(78) W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 30(42) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 2(5.2) nS
   Cossⓘ - Output Capacitance: 180(1204) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0082(0.0022) Ohm
   Package: DFN5X6B
      - MOSFET Cross-Reference Search

 

AON6938 Datasheet (PDF)

 ..1. Size:551K  aosemi
 aon6938.pdf pdf_icon

AON6938

AON693830V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 30A 42A High Current Capability RDS(ON) (at VGS=10V)

 8.1. Size:705K  aosemi
 aon6936.pdf pdf_icon

AON6938

AON693630V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 32A 44A High Current Capability RDS(ON) (at VGS=10V)

 8.2. Size:520K  aosemi
 aon6934.pdf pdf_icon

AON6938

AON693430V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 36A High Current Capability RDS(ON) (at VGS=10V)

 8.3. Size:503K  aosemi
 aon6932.pdf pdf_icon

AON6938

AON693230V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 42A High Current Capability RDS(ON) (at VGS=10V)

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Keywords - AON6938 MOSFET datasheet

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