AON6938 MOSFET Datasheet: N-Ch, 30V, 30(42)A. Full specification with pinout and replacement list

AON6938 Specs and Replacement

Type Designator: AON6938

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31(78) W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30(42) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2(5.2) nS

Cossⓘ - Output Capacitance: 180(1204) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0082(0.0022) Ohm

Package: DFN5X6B

AON6938 substitution

- MOSFET ⓘ Cross-Reference Search

AON6938 datasheet

..1. Size:551K aosemi
aon6938.pdf pdf_icon

AON6938 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 30A 42A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒

8.1. Size:705K aosemi
aon6936.pdf pdf_icon

AON6936 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 32A 44A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒

8.2. Size:520K aosemi
aon6934.pdf pdf_icon

AON6934 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 36A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒

8.3. Size:503K aosemi
aon6932.pdf pdf_icon

AON6932 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 42A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒