AON6946 Todos los transistores

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AON6946 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON6946

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 7.3(13) W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 16(18) A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 2.8(3.3) nS

Conductancia de drenaje-sustrato (Cd): 235(314) pF

Resistencia drenaje-fuente RDS(on): 0.0116(0.0078) Ohm

Empaquetado / Estuche: DFN5x6B

Búsqueda de reemplazo de MOSFET AON6946

AON6946 Datasheet (PDF)

1.1. aon6946.pdf Size:487K _aosemi

AON6946
AON6946

AON6946 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5V VGS VDS 30V 30V • Low Gate Charge ID (at VGS=10V) 16A 18A • High Current Capability RDS(ON) (at VGS=10V) <11.6mΩ <7.8mΩ • RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V) <17mΩ <11.8mΩ Appl

5.1. aon6910a.pdf Size:424K _aosemi

AON6946
AON6946

AON6910A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 The AON6910A is designed to provide a high efficiency Q1 synchronous buck power stage with optimal layout and board VDS 30V 30V space utilization.It includes two specialized MOSFETs in a dual 80A ID (at VGS=10V) 37A Power DFN5x6B package. The Q1 "High Side" MOSFET is <14mΩ <4.1mΩ RDS(ON

5.2. aon6906a.pdf Size:370K _aosemi

AON6946
AON6946

AON6906A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 The AON6906A is designed to provide a high efficiency Q1 synchronous buck power stage with optimal layout and board VDS 30V 30V space utilization.It includes two specialized MOSFETs in a dual 48A ID (at VGS=10V) 37A Power DFN5x6A package. The Q1 "High Side" MOSFET is <14.4mΩ <11.7mΩ RDS(

5.3. aon6922.pdf Size:387K _aosemi

AON6946
AON6946

AON6922 25V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6922 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 25V 25V board space utilization. It includes two specialized ID (at VGS=10V) 71A 85A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V) <3.8mΩ <1.4mΩ "High Side" MOS

5.4. aon6912a.pdf Size:545K _aosemi

AON6946
AON6946

AON6912A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6912A is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 34A 52A MOSFETs in a dual Power DFN5x6 package. The Q1 RDS(ON) (at VGS=10V) <13.7mΩ <7.3mΩ "High Side" M

5.5. aon6932a.pdf Size:616K _aosemi

AON6946
AON6946

AON6932A 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS VDS 30V 30V • Low Gate Charge ID (at VGS=10V) 28A 42A • High Current Capability RDS(ON) (at VGS=10V) <5mΩ <2.5mΩ • RoHS and Halogen-Free Compliant RDS(ON) (at VGS = 4.5V) <8.5mΩ <3.2mΩ 100%

5.6. aon6918.pdf Size:394K _aosemi

AON6946
AON6946

AON6918 25V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6918 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 25V 25V board space utilization. It includes two specialized ID (at VGS=10V) 60A 85A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V) <5.2mΩ <1.8mΩ "High Side" MOS

5.7. aon6908.pdf Size:471K _aosemi

AON6946
AON6946

AON6908 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6908 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 46A 80A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V) <8.9mΩ <4.1mΩ "High Side" MOS

5.8. aon6932.pdf Size:503K _aosemi

AON6946
AON6946

AON6932 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS VDS 30V 30V • Low Gate Charge ID (at VGS=10V) 28A 42A • High Current Capability RDS(ON) (at VGS=10V) <5mΩ <2.4mΩ • RoHS and Halogen-Free Compliant RDS(ON) (at VGS = 4.5V) <8.5mΩ <3.2mΩ 100% U

5.9. aon6912.pdf Size:566K _aosemi

AON6946
AON6946

AON6912 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6912 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 34A 52A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V) <13.7mΩ <7.3mΩ "High Side" MO

5.10. aon6906.pdf Size:562K _aosemi

AON6946
AON6946

AON6906 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 The AON6906 is designed to provide a high efficiency Q1 synchronous buck power stage with optimal layout and board VDS 30V 30V space utilization.It includes two specialized MOSFETs in a dual 48A ID (at VGS=10V) 37A Power DFN5x6A package. The Q1 "High Side" MOSFET is <14.4mΩ <11.7mΩ RDS(ON

5.11. aon6934.pdf Size:520K _aosemi

AON6946
AON6946

AON6934 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS VDS 30V 30V • Low Gate Charge ID (at VGS=10V) 28A 36A • High Current Capability RDS(ON) (at VGS=10V) <5.2mΩ <2.8mΩ • RoHS and Halogen-Free Compliant RDS(ON) (at VGS = 4.5V) <9.5mΩ <4.4mΩ 100%

5.12. aon6974a.pdf Size:482K _aosemi

AON6946
AON6946

AON6974A 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 • Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (SRFET) on Low-Side VDS 30V 30V • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 32A • Low Gate Charge RDS(ON) (at VGS=10V) <5.2mΩ <3.3mΩ • High Current Capability RDS(ON) (at VGS=4.5V) <9.5mΩ <5

5.13. aon6920.pdf Size:394K _aosemi

AON6946
AON6946

AON6920 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6920 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 60A 85A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V) <5.2mΩ <1.8mΩ "High Side" MOS

5.14. aon6936.pdf Size:705K _aosemi

AON6946
AON6946

AON6936 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS VDS 30V 30V • Low Gate Charge ID (at VGS=10V) 32A 44A • High Current Capability RDS(ON) (at VGS=10V) <4.9mΩ <2mΩ • RoHS and Halogen-Free Compliant RDS(ON) (at VGS = 4.5V) <8.4mΩ <2.8mΩ 100% U

5.15. aon6938.pdf Size:551K _aosemi

AON6946
AON6946

AON6938 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS VDS 30V 30V • Low Gate Charge ID (at VGS=10V) 30A 42A • High Current Capability RDS(ON) (at VGS=10V) <8.2mΩ <2.2mΩ • RoHS and Halogen-Free Compliant RDS(ON) (at VGS = 4.5V) <11.5mΩ <3.3mΩ 100

5.16. aon6974.pdf Size:648K _aosemi

AON6946
AON6946

AON6974 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 • Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (SRFET) on Low-Side VDS 30V 30V • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 36A • Low Gate Charge RDS(ON) (at VGS=10V) <5.2mΩ <3.2mΩ • High Current Capability RDS(ON) (at VGS=4.5V) <9.5mΩ <5.

5.17. aon6928.pdf Size:601K _aosemi

AON6946
AON6946

AON6928 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS VDS 30V 30V • Low Gate Charge ID (at VGS=10V) 30A 36A • High Current Capability RDS(ON) (at VGS=10V) <8.2mΩ <2.9mΩ • RoHS and Halogen-Free Compliant RDS(ON) (at VGS = 4.5V) <11.5mΩ <4.4mΩ 100

5.18. aon6973a.pdf Size:482K _aosemi

AON6946
AON6946

AON6973A 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 • Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (SRFET) on Low-Side VDS 30V 30V • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 32A • Low Gate Charge RDS(ON) (at VGS=10V) <5.2mΩ <3.9mΩ • High Current Capability RDS(ON) (at VGS=4.5V) <9.5mΩ <6

5.19. aon6924.pdf Size:434K _aosemi

AON6946
AON6946

AON6924 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6924 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 60A 85A MOSFETs in a dual Power DFN5x6A package. The Q1 “ RDS(ON) (at VGS=10V) <5.2mΩ <1.6mΩ High Side

5.20. aon6908a.pdf Size:431K _aosemi

AON6946
AON6946

AON6908A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6908A is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 46A 80A MOSFETs in a dual Power DFN5x6 package. The Q1 "High RDS(ON) (at VGS=10V) <8.9mΩ <3.6mΩ Side" MO

5.21. aon6978.pdf Size:476K _aosemi

AON6946
AON6946

AON6978 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 • Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (SRFET) on Low-Side VDS 30V 30V • Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 28A 36A • Low Gate Charge RDS(ON) (at VGS=10V) <5.7mΩ <3.8mΩ • High Current Capability RDS(ON) (at VGS=4.5V) <9.4mΩ <

5.22. aon6934a.pdf Size:633K _aosemi

AON6946
AON6946

AON6934A 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS VDS 30V 30V • Low Gate Charge ID (at VGS=10V) 28A 36A • High Current Capability RDS(ON) (at VGS=10V) <5.2mΩ <2.9mΩ • RoHS and Halogen-Free Compliant RDS(ON) (at VGS = 4.5V) <9.5mΩ <4.4mΩ 100

5.23. aon6926.pdf Size:369K _aosemi

AON6946
AON6946

AON6926 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 Q1 The AON6926 is designed to provide a high efficiency 30V synchronous buck power stage with optimal layout and VDS 30V board space utilization. It includes two specialized 50A ID (at VGS=10V) 44A MOSFETs in a dual Power DFN5x6A package. The Q1 <11mΩ <8.5mΩ RDS(ON) (at VGS=10V) "High

5.24. aon6980.pdf Size:481K _aosemi

AON6946
AON6946

AON6980 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 VDS 30V 30V • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) ID (at VGS=10V) 28A 36A • Low Gate Charge RDS(ON) (at VGS=10V) < 6.8mΩ < 3.8mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 10.3mΩ < 4.9mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Te

5.25. aon6970.pdf Size:529K _aosemi

AON6946
AON6946

AON6970 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS VDS 30V 30V • Low Gate Charge ID (at VGS=10V) 58A 85A • High Current Capability RDS(ON) (at VGS=10V) <5.4mΩ <1.5mΩ • RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V) <8.5mΩ <2.3mΩ 100% U

Otros transistores... AON6922 , AON6924 , AON6926 , AON6928 , AON6932A , AON6934A , AON6936 , AON6938 , IRF540 , AON6970 , AON6973A , AON6974A , AON6978 , AON6980 , AON7200 , AON7210 , AON7220 .

 


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