AON6946
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Наименование прибора: AON6946
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 7.3(13)
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 16(18)
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 2.8(3.3)
ns
Cossⓘ - Выходная емкость: 235(314)
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0116(0.0078)
Ohm
Тип корпуса: DFN5X6B
- подбор MOSFET транзистора по параметрам
AON6946
Datasheet (PDF)
..1. Size:487K aosemi
aon6946.pdf 
AON694630V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5V VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 16A 18A High Current Capability RDS(ON) (at VGS=10V)
9.1. Size:350K aosemi
aon6998.pdf 
AON699830V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 82A Low Gate Charge RDS(ON) (at VGS=10V)
9.2. Size:476K aosemi
aon6978.pdf 
AON697830V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V)
9.3. Size:434K aosemi
aon6924.pdf 
AON692430V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6924 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 60A 85AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)
9.4. Size:705K aosemi
aon6936.pdf 
AON693630V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 32A 44A High Current Capability RDS(ON) (at VGS=10V)
9.5. Size:529K aosemi
aon6970.pdf 
AON697030V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 58A 85A High Current Capability RDS(ON) (at VGS=10V)
9.6. Size:350K aosemi
aon6984.pdf 
AON698430V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 82A Low Gate Charge RDS(ON) (at VGS=10V)
9.7. Size:648K aosemi
aon6974.pdf 
AON697430V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V)
9.8. Size:520K aosemi
aon6934.pdf 
AON693430V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 36A High Current Capability RDS(ON) (at VGS=10V)
9.9. Size:369K aosemi
aon6926.pdf 
AON692630V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ2Q1The AON6926 is designed to provide a high efficiency 30Vsynchronous buck power stage with optimal layout and VDS 30Vboard space utilization. It includes two specialized 50A ID (at VGS=10V)44AMOSFETs in a dual Power DFN5x6A package. The Q1
9.10. Size:394K aosemi
aon6918.pdf 
AON691825V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6918 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 25V 25Vboard space utilization. It includes two specialized ID (at VGS=10V) 60A 85AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)
9.11. Size:490K aosemi
aon6996.pdf 
AON699630V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 60A Low Gate Charge RDS(ON) (at VGS=10V)
9.12. Size:387K aosemi
aon6922.pdf 
AON692225V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6922 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 25V 25Vboard space utilization. It includes two specialized ID (at VGS=10V) 71A 85AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)
9.13. Size:551K aosemi
aon6938.pdf 
AON693830V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 30A 42A High Current Capability RDS(ON) (at VGS=10V)
9.14. Size:353K aosemi
aon6982.pdf 
AON698230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.15. Size:353K aosemi
aon6992.pdf 
AON699230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.16. Size:394K aosemi
aon6920.pdf 
AON692030V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6920 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 60A 85AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)
9.17. Size:482K aosemi
aon6973a.pdf 
AON6973A30V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 32A Low Gate Charge RDS(ON) (at VGS=10V)
9.18. Size:482K aosemi
aon6974a.pdf 
AON6974A30V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 32A Low Gate Charge RDS(ON) (at VGS=10V)
9.19. Size:481K aosemi
aon6980.pdf 
AON698030V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power AlphaMOS (MOS LV) technology Low RDS(ON) ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V)
9.20. Size:431K aosemi
aon6908a.pdf 
AON6908A30V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6908A is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 46A 80AMOSFETs in a dual Power DFN5x6 package. The Q1 "High RDS(ON) (at VGS=10V)
9.21. Size:545K aosemi
aon6912a.pdf 
AON6912A30V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6912A is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 34A 52AMOSFETs in a dual Power DFN5x6 package. The Q1 RDS(ON) (at VGS=10V)
9.22. Size:349K aosemi
aon6994.pdf 
AON699430V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 82A Low Gate Charge RDS(ON) (at VGS=10V)
9.23. Size:562K aosemi
aon6906.pdf 
AON690630V Dual Asymmetric N-Channel MOSFETGeneral Description Product Summary Q2The AON6906 is designed to provide a high efficiency Q1synchronous buck power stage with optimal layout and board VDS 30V 30Vspace utilization.It includes two specialized MOSFETs in a dual 48A ID (at VGS=10V)37APower DFN5x6A package. The Q1 "High Side" MOSFET is
9.24. Size:566K aosemi
aon6912.pdf 
AON691230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6912 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 34A 52AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)
9.25. Size:471K aosemi
aon6908.pdf 
AON690830V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6908 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 46A 80AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)
9.26. Size:503K aosemi
aon6932.pdf 
AON693230V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 42A High Current Capability RDS(ON) (at VGS=10V)
9.27. Size:424K aosemi
aon6910a.pdf 
AON6910A30V Dual Asymmetric N-Channel MOSFETGeneral Description Product Summary Q2The AON6910A is designed to provide a high efficiency Q1synchronous buck power stage with optimal layout and board VDS 30V 30Vspace utilization.It includes two specialized MOSFETs in a dual 80A ID (at VGS=10V)37APower DFN5x6B package. The Q1 "High Side" MOSFET is
9.28. Size:616K aosemi
aon6932a.pdf 
AON6932A30V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 42A High Current Capability RDS(ON) (at VGS=10V)
9.29. Size:601K aosemi
aon6928.pdf 
AON692830V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 30A 36A High Current Capability RDS(ON) (at VGS=10V)
9.30. Size:370K aosemi
aon6906a.pdf 
AON6906A30V Dual Asymmetric N-Channel MOSFETGeneral Description Product Summary Q2The AON6906A is designed to provide a high efficiency Q1synchronous buck power stage with optimal layout and board VDS 30V 30Vspace utilization.It includes two specialized MOSFETs in a dual 48A ID (at VGS=10V)37APower DFN5x6A package. The Q1 "High Side" MOSFET is
9.31. Size:633K aosemi
aon6934a.pdf 
AON6934A30V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 36A High Current Capability RDS(ON) (at VGS=10V)
Другие MOSFET... IRFP344
, IRFP350
, IRFP350A
, IRFP350FI
, IRFP350LC
, IRFP351
, IRFP352
, IRFP353
, 2SK3568
, IRFP360
, IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
.
History: MTN4800V8
| STA4470
| STM8300
| 2SK3102-01R
| APT10050LVFR
| RFK25P10
| SJMN380R65F
