AON7290 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON7290
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.5 nS
Cossⓘ - Capacitancia de salida: 175 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0126 Ohm
Paquete / Cubierta: DFN3.3X3.3
Búsqueda de reemplazo de AON7290 MOSFET
AON7290 Datasheet (PDF)
aon7290.pdf
AON7290100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AON7290 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 50Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
aon7296.pdf
AON7296100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AON7296 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 12.5Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
aon7296.pdf
AON7296100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AON7296 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 12.5Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
aon7292.pdf
AON7292100V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS MV) technology 100V Very Low RDS(ON) ID (at VGS=10V) 23A Low Gate Charge RDS(ON) (at VGS=10V)
Otros transistores... AON7210 , AON7220 , AON7240 , AON7242 , AON7244 , AON7246 , AON7254 , AON7280 , IRF3710 , AON7292 , AON7296 , AON7400 , AON7400A , AON7401 , AON7402 , AON7403 , AON7404 .
History: P2003EVT
History: P2003EVT
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