AON7290
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON7290
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 83
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.4
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 3.5
nS
Cossⓘ -
Output Capacitance: 175
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0126
Ohm
Package:
DFN3.3X3.3
AON7290
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON7290
Datasheet (PDF)
..1. Size:267K aosemi
aon7290.pdf 
AON7290100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AON7290 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 50Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
8.1. Size:263K 1
aon7296.pdf
AON7296100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AON7296 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 12.5Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
8.2. Size:263K aosemi
aon7296.pdf
AON7296100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AON7296 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 12.5Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
8.3. Size:259K aosemi
aon7292.pdf
AON7292100V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS MV) technology 100V Very Low RDS(ON) ID (at VGS=10V) 23A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: WPB4002
, FDM15-06KC5
, FQD2N60CTM
, FDM47-06KC5
, FDPF045N10A
, FMD15-06KC5
, FDMS8672S
, FMD21-05QC
, IRFP250N
, FDMS86368F085
, FMD47-06KC5
, FDBL86361F085
, FMK75-01F
, FMM110-015X2F
, FMM150-0075X2F
, FMM22-05PF
, FMM22-06PF
.
