AON7296 Todos los transistores

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 aon7296.pdf

AON7296 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON7296 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 12.5A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 ..2. Size:263K  aosemi
 aon7296.pdf

AON7296 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON7296 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 12.5A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

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 aon7290.pdf

AON7290 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON7290 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 50A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.2. Size:259K  aosemi
 aon7292.pdf

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 aon7264e.pdf

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 aon7254.pdf

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 aon7262e.pdf

AON7262E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 34A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 9.4. Size:461K  1
 aon7244.pdf

AON7244 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON7244 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 50A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

 9.5. Size:330K  aosemi
 aon7232.pdf

AON7232 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET Technology 100V Low RDS(ON) ID (at VGS=10V) 37A Low Gate Charge RDS(ON) (at VGS=10V)

 9.6. Size:348K  aosemi
 aon7264e.pdf

 9.7. Size:270K  aosemi
 aon7254.pdf

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 aon7242.pdf

AON7242 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON7242 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 50A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)

 9.9. Size:337K  aosemi
 aon7262e.pdf

AON7262E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 34A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 9.10. Size:272K  aosemi
 aon7246.pdf

AON7246 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON7246 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 34.5A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

 9.11. Size:221K  aosemi
 aon7200.pdf

AON7200 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 40A frequency switching performance. Conduction and RDS(ON) (at VGS=10V)

 9.12. Size:388K  aosemi
 aon7220.pdf

AON7220 25V N-Channel MOSFET General Description Product Summary VDS 25V The AON7220 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 50A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)

 9.13. Size:563K  aosemi
 aon7264c.pdf

AON7264C TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 9.14. Size:270K  aosemi
 aon7280.pdf

AON7280 80V N-Channel MOSFET General Description Product Summary VDS The AON7280 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high ID (at VGS=10V) 50A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 9.15. Size:239K  aosemi
 aon7210.pdf

AON7210 30V N-Channel MOSFET General Description Product Summary VDS The AON7210 uses trench MOSFET technology that is 30V 50A uniquely optimized to provide the most efficient high ID (at VGS=10V) frequency switching performance.Power losses are

 9.16. Size:151K  aosemi
 aon7240.pdf

AON7240 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON7240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 40A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)

 9.17. Size:229K  aosemi
 aon7202.pdf

AON7202 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7202 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 40A frequency switching performance. Power losses are RDS(ON) (at VGS=10V)

 9.18. Size:332K  aosemi
 aon7230.pdf

AON7230 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 47A Low Gate Charge RDS(ON) (at VGS=10V)

 9.19. Size:277K  aosemi
 aon7244.pdf

AON7244 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON7244 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 50A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

 9.20. Size:343K  aosemi
 aon7246e.pdf

AON7246E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)