AON7296 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AON7296
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.8 V
   trⓘ - Tiempo de subida: 2 nS
   Cossⓘ - Capacitancia de salida: 32 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.066 Ohm
   Paquete / Cubierta: DFN3X3EP

Búsqueda de reemplazo de MOSFET AON7296

AON7296 Datasheet (PDF)

..1. Size:263K 1
aon7296.pdf

AON7296100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AON7296 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 12.5Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

..2. Size:263K aosemi
aon7296.pdf

8.1. Size:267K aosemi
aon7290.pdf

AON7290100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AON7290 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 50Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

8.2. Size:259K aosemi
aon7292.pdf

AON7292100V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS MV) technology 100V Very Low RDS(ON) ID (at VGS=10V) 23A Low Gate Charge RDS(ON) (at VGS=10V)

9.1. Size:348K 1
aon7264e.pdf

AON7264ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 28A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

9.2. Size:500K 1
aon7254.pdf

AON7254150V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS MV) technology 150V Very Low RDS(ON) ID (at VGS=10V) 17A Low Gate Charge RDS(ON) (at VGS=10V)

9.3. Size:575K 1
aon7262e.pdf

AON7262ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 34A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

9.4. Size:461K 1
aon7244.pdf

AON724460V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AON7244 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 50Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

9.5. Size:330K aosemi
aon7232.pdf

AON7232100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET Technology 100V Low RDS(ON) ID (at VGS=10V) 37A Low Gate Charge RDS(ON) (at VGS=10V)

9.6. Size:348K aosemi
aon7264e.pdf

AON7264ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 28A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

9.7. Size:270K aosemi
aon7254.pdf

AON7254150V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS MV) technology 150V Very Low RDS(ON) ID (at VGS=10V) 17A Low Gate Charge RDS(ON) (at VGS=10V)

9.8. Size:276K aosemi
aon7242.pdf

AON724240V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON7242 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 50Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

9.9. Size:337K aosemi
aon7262e.pdf

AON7262ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 34A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

9.10. Size:272K aosemi
aon7246.pdf

AON724660V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AON7246 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 34.5Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

9.11. Size:221K aosemi
aon7200.pdf

AON7200 30V N-Channel MOSFET General Description Product SummaryVDS30VThe AON7200 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 40Afrequency switching performance. Conduction and RDS(ON) (at VGS=10V)

9.12. Size:388K aosemi
aon7220.pdf

AON722025V N-Channel MOSFETGeneral Description Product SummaryVDS25VThe AON7220 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 50Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

9.13. Size:563K aosemi
aon7264c.pdf

AON7264CTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

9.14. Size:270K aosemi
aon7280.pdf

AON728080V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON7280 uses trench MOSFET technology that is 80Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 50Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.15. Size:239K aosemi
aon7210.pdf

AON721030V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON7210 uses trench MOSFET technology that is 30V50Auniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance.Power losses are

9.16. Size:151K aosemi
aon7240.pdf

AON724040V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON7240 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 40Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

9.17. Size:229K aosemi
aon7202.pdf

AON720230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7202 uses Trench MOSFET technology thatis uniquely optimized to provide the most efficient high ID (at VGS=10V) 40Afrequency switching performance. Power losses are RDS(ON) (at VGS=10V)

9.18. Size:332K aosemi
aon7230.pdf

AON7230100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 47A Low Gate Charge RDS(ON) (at VGS=10V)

9.19. Size:277K aosemi
aon7244.pdf

9.20. Size:343K aosemi
aon7246e.pdf

AON7246ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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