Аналоги AON7296. Основные параметры
Наименование производителя: AON7296
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 20.8
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.8
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 12.5
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 2
ns
Cossⓘ - Выходная емкость: 32
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.066
Ohm
Тип корпуса:
DFN3X3EP
Аналог (замена) для AON7296
-
подбор ⓘ MOSFET транзистора по параметрам
AON7296 даташит
..1. Size:263K 1
aon7296.pdf 
AON7296 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON7296 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 12.5A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
..2. Size:263K aosemi
aon7296.pdf 
AON7296 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON7296 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 12.5A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
8.1. Size:267K aosemi
aon7290.pdf 
AON7290 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON7290 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 50A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.3. Size:575K 1
aon7262e.pdf 
AON7262E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 34A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.4. Size:461K 1
aon7244.pdf 
AON7244 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON7244 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 50A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)
9.5. Size:330K aosemi
aon7232.pdf 
AON7232 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET Technology 100V Low RDS(ON) ID (at VGS=10V) 37A Low Gate Charge RDS(ON) (at VGS=10V)
9.8. Size:276K aosemi
aon7242.pdf 
AON7242 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON7242 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 50A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.9. Size:337K aosemi
aon7262e.pdf 
AON7262E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 34A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.10. Size:272K aosemi
aon7246.pdf 
AON7246 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON7246 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 34.5A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)
9.11. Size:221K aosemi
aon7200.pdf 
AON7200 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 40A frequency switching performance. Conduction and RDS(ON) (at VGS=10V)
9.12. Size:388K aosemi
aon7220.pdf 
AON7220 25V N-Channel MOSFET General Description Product Summary VDS 25V The AON7220 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 50A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.13. Size:563K aosemi
aon7264c.pdf 
AON7264C TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
9.14. Size:270K aosemi
aon7280.pdf 
AON7280 80V N-Channel MOSFET General Description Product Summary VDS The AON7280 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high ID (at VGS=10V) 50A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.15. Size:239K aosemi
aon7210.pdf 
AON7210 30V N-Channel MOSFET General Description Product Summary VDS The AON7210 uses trench MOSFET technology that is 30V 50A uniquely optimized to provide the most efficient high ID (at VGS=10V) frequency switching performance.Power losses are
9.16. Size:151K aosemi
aon7240.pdf 
AON7240 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON7240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 40A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.17. Size:229K aosemi
aon7202.pdf 
AON7202 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7202 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 40A frequency switching performance. Power losses are RDS(ON) (at VGS=10V)
9.18. Size:332K aosemi
aon7230.pdf 
AON7230 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 47A Low Gate Charge RDS(ON) (at VGS=10V)
9.19. Size:277K aosemi
aon7244.pdf 
AON7244 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON7244 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 50A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)
9.20. Size:343K aosemi
aon7246e.pdf 
AON7246E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
Другие MOSFET... AON7240
, AON7242
, AON7244
, AON7246
, AON7254
, AON7280
, AON7290
, AON7292
, AON6414A
, AON7400
, AON7400A
, AON7401
, AON7402
, AON7403
, AON7404
, AON7405
, AON7406
.
