AON7440 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON7440
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 42 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 410 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
Encapsulados: DFN3.3X3.3
Búsqueda de reemplazo de AON7440 MOSFET
- Selecciónⓘ de transistores por parámetros
AON7440 datasheet
aon7440.pdf
AON7440 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power technology Low RDS(ON) ID (at VGS=10V) 50A High Current Capability RDS(ON) (at VGS=10V)
aon7446.pdf
AON7446 60V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 60V The AON7446 is fabricated with SDMOSTM trench ID (at VGS=10V) 8A technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)
aon7448.pdf
AON7448 80V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 80V The AON7448 is fabricated with SDMOSTM trench ID (at VGS=10V) 24A technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)
aon7442.pdf
AON7442 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)
Otros transistores... AON7422E, AON7423, AON7424, AON7426, AON7428, AON7430, AON7432, AON7436, 5N65, AON7444, AON7446, AON7448, AON7450, AON7452, AON7458, AON7460, AON7462
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