AON7440
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON7440
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 42
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 410
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028
Ohm
Package:
DFN3.3X3.3
AON7440
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON7440
Datasheet (PDF)
..1. Size:313K aosemi
aon7440.pdf
AON744030V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power technology Low RDS(ON) ID (at VGS=10V) 50A High Current Capability RDS(ON) (at VGS=10V)
8.1. Size:265K aosemi
aon7446.pdf
AON744660V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS60VThe AON7446 is fabricated with SDMOSTM trench ID (at VGS=10V) 8Atechnology that combines excellent RDS(ON) with low gatecharge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)
8.2. Size:268K aosemi
aon7448.pdf
AON744880V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS80VThe AON7448 is fabricated with SDMOSTM trench ID (at VGS=10V) 24Atechnology that combines excellent RDS(ON) with low gatecharge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)
8.3. Size:253K aosemi
aon7442.pdf
AON744230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)
8.4. Size:263K aosemi
aon7444.pdf
AON744460V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS60VThe AON7444 is fabricated with SDMOSTM trench ID (at VGS=10V) 33Atechnology that combines excellent RDS(ON) with low gatecharge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)
Datasheet: WPB4002
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