AON7810 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AON781030V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 6A Low Gate Charge RDS(ON) (at VGS=10V)

AON781230V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 6A Low Gate Charge RDS(ON) (at VGS=10V)

AON780430V Dual N-Channel MOSFETGeneral Description Product SummaryVDSThe AON7804 is designed to provide a high efficiency 30V22Asynchronous buck power stage with optimal layout and ID (at VGS=10V)board space utilization. It includes two low RDS (ON) RDS(ON) (at VGS=10V)

AON780430V Dual N-Channel MOSFETGeneral Description Product SummaryVDSThe AON7804 is designed to provide a high efficiency 30V22Asynchronous buck power stage with optimal layout and ID (at VGS=10V)board space utilization. It includes two low RDS (ON) RDS(ON) (at VGS=10V)

AON782620V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON7826 is designed to provide a high efficiencysynchronous buck power stage with optimal layout and ID (at VGS=10V) 22Aboard space utilization. It includes two low RDS (ON) RDS(ON) (at VGS=10V)

AON782020V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON7820 combines advanced trench MOSFETtechnology with a low resistance package to provide IS (at VGS=4.5V) 35Aextremely low RSS(ON). This device is ideal for load switch RSS(ON) (at VGS=4.5V)