AON7820 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AON7820
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 18.2 nC
   trⓘ - Tiempo de subida: 3.7 nS
   Cossⓘ - Capacitancia de salida: 312 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: DFN3X3EP

Búsqueda de reemplazo de MOSFET AON7820

AON7820 Datasheet (PDF)

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aon7820.pdf

AON782020V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON7820 combines advanced trench MOSFETtechnology with a low resistance package to provide IS (at VGS=4.5V) 35Aextremely low RSS(ON). This device is ideal for load switch RSS(ON) (at VGS=4.5V)

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aon7826.pdf

AON782620V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON7826 is designed to provide a high efficiencysynchronous buck power stage with optimal layout and ID (at VGS=10V) 22Aboard space utilization. It includes two low RDS (ON) RDS(ON) (at VGS=10V)

9.1. Size:253K 1
aon7804.pdf

AON780430V Dual N-Channel MOSFETGeneral Description Product SummaryVDSThe AON7804 is designed to provide a high efficiency 30V22Asynchronous buck power stage with optimal layout and ID (at VGS=10V)board space utilization. It includes two low RDS (ON) RDS(ON) (at VGS=10V)

9.2. Size:253K aosemi
aon7804.pdf

9.3. Size:292K aosemi
aon7812.pdf

AON781230V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 6A Low Gate Charge RDS(ON) (at VGS=10V)

9.4. Size:283K aosemi
aon7810.pdf

AON781030V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 6A Low Gate Charge RDS(ON) (at VGS=10V)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SUP85N03-3M6P | SVF12N65CKL

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