Справочник MOSFET. AON7820

 

AON7820 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AON7820
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 31 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 35 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 18.2 nC
   trⓘ - Время нарастания: 3.7 ns
   Cossⓘ - Выходная емкость: 312 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
   Тип корпуса: DFN3X3EP

 Аналог (замена) для AON7820

 

 

AON7820 Datasheet (PDF)

 ..1. Size:292K  aosemi
 aon7820.pdf

AON7820 AON7820

AON782020V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON7820 combines advanced trench MOSFETtechnology with a low resistance package to provide IS (at VGS=4.5V) 35Aextremely low RSS(ON). This device is ideal for load switch RSS(ON) (at VGS=4.5V)

 8.1. Size:229K  aosemi
 aon7826.pdf

AON7820 AON7820

AON782620V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON7826 is designed to provide a high efficiencysynchronous buck power stage with optimal layout and ID (at VGS=10V) 22Aboard space utilization. It includes two low RDS (ON) RDS(ON) (at VGS=10V)

 9.1. Size:253K  1
 aon7804.pdf

AON7820 AON7820

AON780430V Dual N-Channel MOSFETGeneral Description Product SummaryVDSThe AON7804 is designed to provide a high efficiency 30V22Asynchronous buck power stage with optimal layout and ID (at VGS=10V)board space utilization. It includes two low RDS (ON) RDS(ON) (at VGS=10V)

 9.2. Size:253K  aosemi
 aon7804.pdf

AON7820 AON7820

AON780430V Dual N-Channel MOSFETGeneral Description Product SummaryVDSThe AON7804 is designed to provide a high efficiency 30V22Asynchronous buck power stage with optimal layout and ID (at VGS=10V)board space utilization. It includes two low RDS (ON) RDS(ON) (at VGS=10V)

 9.3. Size:292K  aosemi
 aon7812.pdf

AON7820 AON7820

AON781230V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 6A Low Gate Charge RDS(ON) (at VGS=10V)

 9.4. Size:283K  aosemi
 aon7810.pdf

AON7820 AON7820

AON781030V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 6A Low Gate Charge RDS(ON) (at VGS=10V)

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