AON7826 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AON7826
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 16.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 7.5 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: DFN3X3ADUAL

Búsqueda de reemplazo de MOSFET AON7826

AON7826 Datasheet (PDF)

..1. Size:229K aosemi
aon7826.pdf

AON782620V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON7826 is designed to provide a high efficiencysynchronous buck power stage with optimal layout and ID (at VGS=10V) 22Aboard space utilization. It includes two low RDS (ON) RDS(ON) (at VGS=10V)

8.1. Size:292K aosemi
aon7820.pdf

AON782020V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON7820 combines advanced trench MOSFETtechnology with a low resistance package to provide IS (at VGS=4.5V) 35Aextremely low RSS(ON). This device is ideal for load switch RSS(ON) (at VGS=4.5V)

9.1. Size:253K 1
aon7804.pdf

AON780430V Dual N-Channel MOSFETGeneral Description Product SummaryVDSThe AON7804 is designed to provide a high efficiency 30V22Asynchronous buck power stage with optimal layout and ID (at VGS=10V)board space utilization. It includes two low RDS (ON) RDS(ON) (at VGS=10V)

9.2. Size:253K aosemi
aon7804.pdf

9.3. Size:292K aosemi
aon7812.pdf

AON781230V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 6A Low Gate Charge RDS(ON) (at VGS=10V)

9.4. Size:283K aosemi
aon7810.pdf

AON781030V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 6A Low Gate Charge RDS(ON) (at VGS=10V)

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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