AON7826 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AON7826 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON7826

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 16.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 22 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.5 nS

Cossⓘ - Capacitancia de salida: 95 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm

Encapsulados: DFN3X3ADUAL

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AON7826 datasheet

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AON7826 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON7826 is designed to provide a high efficiency synchronous buck power stage with optimal layout and ID (at VGS=10V) 22A board space utilization. It includes two low RDS (ON) RDS(ON) (at VGS=10V)

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AON7820 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON7820 combines advanced trench MOSFET technology with a low resistance package to provide IS (at VGS=4.5V) 35A extremely low RSS(ON). This device is ideal for load switch RSS(ON) (at VGS=4.5V)

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AON7804 30V Dual N-Channel MOSFET General Description Product Summary VDS The AON7804 is designed to provide a high efficiency 30V 22A synchronous buck power stage with optimal layout and ID (at VGS=10V) board space utilization. It includes two low RDS (ON) RDS(ON) (at VGS=10V)

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AON7826 Todos los transistores