AON7826 MOSFET Datasheet: N-Ch, 20V, 22A. Full specification with pinout and replacement list

AON7826 Specs and Replacement

Type Designator: AON7826

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 16.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: DFN3X3ADUAL

AON7826 substitution

- MOSFET ⓘ Cross-Reference Search

AON7826 datasheet

..1. Size:229K aosemi
aon7826.pdf pdf_icon

AON7826 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON7826 is designed to provide a high efficiency synchronous buck power stage with optimal layout and ID (at VGS=10V) 22A board space utilization. It includes two low RDS (ON) RDS(ON) (at VGS=10V) ... See More ⇒

8.1. Size:292K aosemi
aon7820.pdf pdf_icon

AON7820 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON7820 combines advanced trench MOSFET technology with a low resistance package to provide IS (at VGS=4.5V) 35A extremely low RSS(ON). This device is ideal for load switch RSS(ON) (at VGS=4.5V) ... See More ⇒

9.1. Size:253K 1
aon7804.pdf pdf_icon

AON7804 30V Dual N-Channel MOSFET General Description Product Summary VDS The AON7804 is designed to provide a high efficiency 30V 22A synchronous buck power stage with optimal layout and ID (at VGS=10V) board space utilization. It includes two low RDS (ON) RDS(ON) (at VGS=10V) ... See More ⇒

9.2. Size:253K aosemi
aon7804.pdf pdf_icon