AOT11N70 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOT11N70

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 271 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 74 nS

Cossⓘ - Capacitancia de salida: 146 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.87 Ohm

Encapsulados: TO-220

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AOT11N70 datasheet

 ..1. Size:218K  aosemi
 aot11n70.pdf pdf_icon

AOT11N70

AOT11N70/AOTF11N70 700V,11A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOT11N70 & AOTF11N70 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 11A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..2. Size:261K  inchange semiconductor
 aot11n70.pdf pdf_icon

AOT11N70

isc N-Channel MOSFET Transistor AOT11N70 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.87 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 8.1. Size:545K  aosemi
 aot11n60.pdf pdf_icon

AOT11N70

AOT11N60/AOTF11N60 600V,11A N-Channel MOSFET General Description Product Summary VDS The AOT11N60 & AOTF11N60 have been fabricated 700V@150 using an advanced high voltage MOSFET process that is ID (at VGS=10V) 11A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 8.2. Size:457K  aosemi
 aot11n60l aotf11n60l aotf11n60.pdf pdf_icon

AOT11N70

AOT11N60L/AOTF11N60L/AOTF11N60 600V,11A N-Channel MOSFET General Description Product Summary VDS The AOT11N60L & AOTF11N60L & AOTF11N60 700V@150 have been fabricated using an advanced high voltage ID (at VGS=10V) 11A MOSFET process that is designed to deliver high RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... AOP605, AOP609, AOT10N60, AOT10N65, AOT10T60P, AOT1100L, AOT11C60, AOT11N60, IRF740, AOT11S60, AOT11S65, AOT12N30, AOT12N40, AOT12N50, AOT12N60, AOT12N60FD, AOT12N65