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AOT11N70 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: AOT11N70

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 271 W

Предельно допустимое напряжение сток-исток (Uds): 700 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 4.5 V

Максимально допустимый постоянный ток стока (Id): 11 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 74 ns

Выходная емкость (Cd): 146 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.87 Ohm

Тип корпуса: TO-220

Аналог (замена) для AOT11N70

 

 

AOT11N70 Datasheet (PDF)

1.1. aot11n70.pdf Size:218K _aosemi

AOT11N70
AOT11N70

AOT11N70/AOTF11N70 700V,11A N-Channel MOSFET General Description Product Summary VDS 800V@150℃ The AOT11N70 & AOTF11N70 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 11A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.87Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss al

4.1. aot11n60.pdf Size:545K _aosemi

AOT11N70
AOT11N70

AOT11N60/AOTF11N60 600V,11A N-Channel MOSFET General Description Product Summary VDS The AOT11N60 & AOTF11N60 have been fabricated 700V@150℃ using an advanced high voltage MOSFET process that is ID (at VGS=10V) 11A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.65Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alon

 5.1. aot11s60l.pdf Size:292K _aosemi

AOT11N70
AOT11N70

AOT11S60/AOB11S60/AOTF11S60 TM 600V 11A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399Ω performance and robustness in switching applications. Qg,typ 11nC By providin

5.2. aot11s65l.pdf Size:300K _aosemi

AOT11N70
AOT11N70

AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399Ω performance and robustness in switching applications. Qg,typ 13.2nC By provi

 5.3. aot11s60.pdf Size:292K _aosemi

AOT11N70
AOT11N70

AOT11S60/AOB11S60/AOTF11S60 TM 600V 11A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399Ω performance and robustness in switching applications. Qg,typ 11nC By providin

5.4. aot11c60.pdf Size:470K _aosemi

AOT11N70
AOT11N70

AOT11C60/AOB11C60/AOTF11C60 600V,11A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700 The AOT11C60 & AOB11C60 & AOTF11C60 are fabricated using an advanced high voltage MOSFET IDM 80A process that is designed to deliver high levels of RDS(ON),max < 0.44Ω performance and robustness in popular AC-DC Qg,typ 30nC applications.By providing low RDS(on), Ciss and C

 5.5. aot11s65.pdf Size:299K _aosemi

AOT11N70
AOT11N70

AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399Ω performance and robustness in switching applications. Qg,typ 13.2nC By provi

5.6. aot1100l.pdf Size:292K _aosemi

AOT11N70
AOT11N70

AOT1100L/AOB1100L 100V N-Channel Rugged Planar MOSFET General Description Product Summary VDS 100V The AOT1100L/AOB1100L uses a robust technology that is designed to provide efficient and reliable power ID (at VGS=10V) 130A conversion even in the most demanding applications, RDS(ON) (at VGS=10V) < 12mΩ including motor control. With low RDS(ON) and excellent thermal capability thi

Другие MOSFET... AOP605 , AOP609 , AOT10N60 , AOT10N65 , AOT10T60P , AOT1100L , AOT11C60 , AOT11N60 , IRF740 , AOT11S60 , AOT11S65 , AOT12N30 , AOT12N40 , AOT12N50 , AOT12N60 , AOT12N60FD , AOT12N65 .

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Список транзисторов

Обновления

MOSFET: FQA22P10 | FQA20N40 | FQA19N20L | FQA17P10 | FQA17N40 | FQA16N50 | FQA16N25C | FQA14N30 | FQA13N80 | FQA13N50C | FQA13N50 | FQA12P20 | FQA12N60 | FQA11N90C | FQA11N90 |
 


 

 

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