AOT11S60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOT11S60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 178 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 37.3 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.399 Ohm

Encapsulados: TO-220

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AOT11S60 datasheet

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AOT11S60

AOT11S60/AOB11S60/AOTF11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 11nC By providin

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 aot11s60l aob11s60l aotf11s60l aotf11s60.pdf pdf_icon

AOT11S60

AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 TM 600V 11A a MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT11S60L & AOB11S60L & AOTF11S60L & AOTF11S60 have been fabricated using the advanced IDM 45A aMOSTM high voltage process that is designed to deliver high RDS(ON),max 0.399W levels of performance and robustness in switching applications. Qg,typ 11

 0.2. Size:292K  aosemi
 aot11s60l.pdf pdf_icon

AOT11S60

AOT11S60/AOB11S60/AOTF11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 11nC By providin

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 aot11s60l.pdf pdf_icon

AOT11S60

isc N-Channel MOSFET Transistor AOT11S60L FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.399 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

MOSTRAR MÁS

Otros transistores... AOP609, AOT10N60, AOT10N65, AOT10T60P, AOT1100L, AOT11C60, AOT11N60, AOT11N70, IRF840, AOT11S65, AOT12N30, AOT12N40, AOT12N50, AOT12N60, AOT12N60FD, AOT12N65, AOT13N50