AOT11S60 Specs and Replacement

Type Designator: AOT11S60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 178 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 37.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.399 Ohm

Package: TO-220

AOT11S60 substitution

- MOSFET ⓘ Cross-Reference Search

 

AOT11S60 datasheet

 ..1. Size:292K  aosemi
 aot11s60.pdf pdf_icon

AOT11S60

AOT11S60/AOB11S60/AOTF11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 11nC By providin... See More ⇒

 0.1. Size:579K  aosemi
 aot11s60l aob11s60l aotf11s60l aotf11s60.pdf pdf_icon

AOT11S60

AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 TM 600V 11A a MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT11S60L & AOB11S60L & AOTF11S60L & AOTF11S60 have been fabricated using the advanced IDM 45A aMOSTM high voltage process that is designed to deliver high RDS(ON),max 0.399W levels of performance and robustness in switching applications. Qg,typ 11... See More ⇒

 0.2. Size:292K  aosemi
 aot11s60l.pdf pdf_icon

AOT11S60

AOT11S60/AOB11S60/AOTF11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 11nC By providin... See More ⇒

 0.3. Size:260K  inchange semiconductor
 aot11s60l.pdf pdf_icon

AOT11S60

isc N-Channel MOSFET Transistor AOT11S60L FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.399 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu... See More ⇒

SHOW MORE

Detailed specifications: AOP609, AOT10N60, AOT10N65, AOT10T60P, AOT1100L, AOT11C60, AOT11N60, AOT11N70, IRF840, AOT11S65, AOT12N30, AOT12N40, AOT12N50, AOT12N60, AOT12N60FD, AOT12N65, AOT13N50

Keywords - AOT11S60 MOSFET specs

 AOT11S60 cross reference

 AOT11S60 equivalent finder

 AOT11S60 pdf lookup

 AOT11S60 substitution

 AOT11S60 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.