AOT12N60FD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOT12N60FD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 278 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 90 nS

Cossⓘ - Capacitancia de salida: 166 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm

Encapsulados: TO-220

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AOT12N60FD datasheet

 ..1. Size:590K  aosemi
 aot12n60fd.pdf pdf_icon

AOT12N60FD

AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 ..2. Size:260K  inchange semiconductor
 aot12n60fd.pdf pdf_icon

AOT12N60FD

isc N-Channel MOSFET Transistor AOT12N60FD FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 6.1. Size:450K  aosemi
 aot12n60.pdf pdf_icon

AOT12N60FD

AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 6.2. Size:575K  aosemi
 aot12n60 aotf12n60.pdf pdf_icon

AOT12N60FD

AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... AOT11N60, AOT11N70, AOT11S60, AOT11S65, AOT12N30, AOT12N40, AOT12N50, AOT12N60, IRFZ44, AOT12N65, AOT13N50, AOT1404L, AOT14N50, AOT14N50FD, AOT15S60, AOT1606L, AOT1608L