AOT14N50FD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOT14N50FD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 278 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 94 nS

Cossⓘ - Capacitancia de salida: 179 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.47 Ohm

Encapsulados: TO-220

 Búsqueda de reemplazo de AOT14N50FD MOSFET

- Selecciónⓘ de transistores por parámetros

 

AOT14N50FD datasheet

 ..1. Size:232K  aosemi
 aot14n50fd.pdf pdf_icon

AOT14N50FD

AOT14N50FD/AOTF14N50FD 500V, 14A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT14N50FD/AOTF14N50FD have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 14A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..2. Size:260K  inchange semiconductor
 aot14n50fd.pdf pdf_icon

AOT14N50FD

isc N-Channel MOSFET Transistor AOT14N50FD FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.47 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 6.1. Size:258K  aosemi
 aot14n50.pdf pdf_icon

AOT14N50FD

AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 14A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 6.2. Size:180K  aosemi
 aot14n50 aotf14n50.pdf pdf_icon

AOT14N50FD

AOT14N50 / AOTF14N50 500V, 14A N-Channel MOSFET General Description Features The AOT14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET process VDS (V) = 600V@150 C that is designed to deliver high levels of performance ID=14A and robustness in popular AC-DC applications. RDS(ON)

MOSTRAR MÁS

Otros transistores... AOT12N40, AOT12N50, AOT12N60, AOT12N60FD, AOT12N65, AOT13N50, AOT1404L, AOT14N50, IRF640N, AOT15S60, AOT1606L, AOT1608L, AOT16N50, AOT1N60, AOT20C60, AOT20N25, AOT20N60