AOT14N50FD
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOT14N50FD
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 278
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 14
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 38.8
nC
trⓘ - Rise Time: 94
nS
Cossⓘ -
Output Capacitance: 179
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.47
Ohm
Package:
TO-220
AOT14N50FD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOT14N50FD
Datasheet (PDF)
..1. Size:232K aosemi
aot14n50fd.pdf 
AOT14N50FD/AOTF14N50FD500V, 14A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT14N50FD/AOTF14N50FD have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 14Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
..2. Size:260K inchange semiconductor
aot14n50fd.pdf
isc N-Channel MOSFET Transistor AOT14N50FDFEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.47(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
6.1. Size:258K aosemi
aot14n50.pdf
AOT14N50/AOB14N50/AOTF14N50500V, 14A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT14N50 &AOB14N50 & AOTF14N50 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 14Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)
6.2. Size:260K inchange semiconductor
aot14n50.pdf
isc N-Channel MOSFET Transistor AOT14N50FEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
9.1. Size:425K aosemi
aot1404l.pdf
AOT1404L/AOB1404L40V N-Channel Rugged Planar MOSFETGeneral Description Product SummaryVDS40VThe AOT1404L/AOB1404L uses a robust technology thatis designed to provide efficient and reliable power ID (at VGS=10V) 220Aconversion even in the most demanding applications, RDS(ON) (at VGS=10V)
9.2. Size:259K inchange semiconductor
aot1404l.pdf
isc N-Channel MOSFET Transistor AOT1404LFEATURESDrain Current I = 220A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 3.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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