AOT20C60 Todos los transistores

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AOT20C60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOT20C60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 463 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Tiempo de elevación (tr): 76 nS

Conductancia de drenaje-sustrato (Cd): 145 pF

Resistencia drenaje-fuente RDS(on): 0.25 Ohm

Empaquetado / Estuche: TO-220

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AOT20C60 Datasheet (PDF)

1.1. aot20c60.pdf Size:263K _aosemi

AOT20C60
AOT20C60

AOT20C60/AOB20C60/AOTF20C60 600V,20A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V • Trench Power AlphaMOS-II technology • Low RDS(ON) IDM 145A • Low Ciss and Crss RDS(ON),max < 0.25Ω • High Current Capability Qg,typ 52nC • RoHS and Halogen Free Compliant Eoss @ 400V 8.5µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting

5.1. aot20n25.pdf Size:285K _aosemi

AOT20C60
AOT20C60

AOT20N25 250V,20A N-Channel MOSFET General Description Product Summary VDS 300V@150℃ The AOT20N25 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.17Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

5.2. aot20n25l.pdf Size:285K _aosemi

AOT20C60
AOT20C60

AOT20N25 250V,20A N-Channel MOSFET General Description Product Summary VDS 300V@150℃ The AOT20N25 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.17Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

 5.3. aot20s60.pdf Size:324K _aosemi

AOT20C60
AOT20C60

AOT20S60/AOB20S60/AOTF20S60 TM 600V 20A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage IDM 80A process that is designed to deliver high levels of RDS(ON),max 0.199Ω performance and robustness in switching applications. Qg,typ 20nC By providin

5.4. aot20n60.pdf Size:540K _aosemi

AOT20C60
AOT20C60

AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.37Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo

 5.5. aot20n60l.pdf Size:540K _aosemi

AOT20C60
AOT20C60

AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.37Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo

5.6. aot20s60l.pdf Size:325K _aosemi

AOT20C60
AOT20C60

AOT20S60/AOB20S60/AOTF20S60 TM 600V 20A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage IDM 80A process that is designed to deliver high levels of RDS(ON),max 0.199Ω performance and robustness in switching applications. Qg,typ 20nC By providin

Otros transistores... AOT1404L , AOT14N50 , AOT14N50FD , AOT15S60 , AOT1606L , AOT1608L , AOT16N50 , AOT1N60 , IRF520 , AOT20N25 , AOT20N60 , AOT20S60 , AOT210L , AOT22N50 , AOT240L , AOT2500L , AOT254L .

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