AOT20C60
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOT20C60
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 463
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 52
nC
trⓘ - Rise Time: 76
nS
Cossⓘ -
Output Capacitance: 145
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25
Ohm
Package:
TO-220
AOT20C60
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOT20C60
Datasheet (PDF)
..1. Size:263K aosemi
aot20c60.pdf 
AOT20C60/AOB20C60/AOTF20C60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700V Trench Power AlphaMOS-II technology Low RDS(ON) IDM 145A Low Ciss and Crss RDS(ON),max
9.1. Size:324K aosemi
aot20s60.pdf
AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin
9.2. Size:285K aosemi
aot20n25.pdf
AOT20N25250V,20A N-Channel MOSFETGeneral Description Product Summary VDS300V@150The AOT20N25 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
9.3. Size:405K aosemi
aot20s60 aob20s60 aotf20s60.pdf
AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin
9.4. Size:325K aosemi
aot20s60l.pdf
AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin
9.5. Size:1196K aosemi
aot20b65m1.pdf
AOK20B65M1/AOT20B65M1/AOB20B65M1TM650V, 20A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 20A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(sat) enab
9.6. Size:540K aosemi
aot20n60.pdf
AOT20N60/AOTF20N60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT20N60 & AOTF20N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 20Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
9.7. Size:540K aosemi
aot20n60l.pdf
AOT20N60/AOTF20N60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT20N60 & AOTF20N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 20Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
9.8. Size:285K aosemi
aot20n25l.pdf
AOT20N25250V,20A N-Channel MOSFETGeneral Description Product Summary VDS300V@150The AOT20N25 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
9.9. Size:261K inchange semiconductor
aot20n25.pdf
isc N-Channel MOSFET Transistor AOT20N25FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.17(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
9.10. Size:261K inchange semiconductor
aot20n60.pdf
isc N-Channel MOSFET Transistor AOT20N60FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.37(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
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