All MOSFET. AOT20C60 Datasheet

 

AOT20C60 MOSFET. Datasheet pdf. Equivalent

Type Designator: AOT20C60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 463 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 76 nS

Drain-Source Capacitance (Cd): 145 pF

Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm

Package: TO-220

AOT20C60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOT20C60 Datasheet (PDF)

1.1. aot20c60.pdf Size:263K _aosemi

AOT20C60
AOT20C60

AOT20C60/AOB20C60/AOTF20C60 600V,20A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V • Trench Power AlphaMOS-II technology • Low RDS(ON) IDM 145A • Low Ciss and Crss RDS(ON),max < 0.25Ω • High Current Capability Qg,typ 52nC • RoHS and Halogen Free Compliant Eoss @ 400V 8.5µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting

5.1. aot20n25.pdf Size:285K _aosemi

AOT20C60
AOT20C60

AOT20N25 250V,20A N-Channel MOSFET General Description Product Summary VDS 300V@150℃ The AOT20N25 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.17Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

5.2. aot20n25l.pdf Size:285K _aosemi

AOT20C60
AOT20C60

AOT20N25 250V,20A N-Channel MOSFET General Description Product Summary VDS 300V@150℃ The AOT20N25 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.17Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

 5.3. aot20s60.pdf Size:324K _aosemi

AOT20C60
AOT20C60

AOT20S60/AOB20S60/AOTF20S60 TM 600V 20A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage IDM 80A process that is designed to deliver high levels of RDS(ON),max 0.199Ω performance and robustness in switching applications. Qg,typ 20nC By providin

5.4. aot20n60.pdf Size:540K _aosemi

AOT20C60
AOT20C60

AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.37Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo

 5.5. aot20n60l.pdf Size:540K _aosemi

AOT20C60
AOT20C60

AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.37Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo

5.6. aot20s60l.pdf Size:325K _aosemi

AOT20C60
AOT20C60

AOT20S60/AOB20S60/AOTF20S60 TM 600V 20A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage IDM 80A process that is designed to deliver high levels of RDS(ON),max 0.199Ω performance and robustness in switching applications. Qg,typ 20nC By providin

Datasheet: AOT1404L , AOT14N50 , AOT14N50FD , AOT15S60 , AOT1606L , AOT1608L , AOT16N50 , AOT1N60 , IRF520 , AOT20N25 , AOT20N60 , AOT20S60 , AOT210L , AOT22N50 , AOT240L , AOT2500L , AOT254L .

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