AOT266L Todos los transistores

 ..1. Size:414K  aosemi
 aot266l aob266l aotf266l.pdf

AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET General Description Product Summary VDS The AOT266L & AOB266L & AOTF266L uses Trench 60V MOSFET technology that is uniquely optimized to ID (at VGS=10V) 140A/78A provide the most efficient high frequency switching RDS(ON) (at VGS=10V)

 ..2. Size:405K  aosemi
 aot266l.pdf

AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET General Description Product Summary VDS The AOT266L & AOB266L & AOTF266L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 140A/78A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 ..3. Size:245K  inchange semiconductor
 aot266l.pdf

isc N-Channel MOSFET Transistor AOT266L FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

 9.1. Size:333K  aosemi
 aot262l.pdf

AOT262L/AOB262L 60V N-Channel MOSFET General Description Product Summary VDS 60V Trench Power MV MOSFET technology Low RDS(ON) ID (at VGS=10V) 140A Low Gate Charge RDS(ON) (at VGS=10V)

 9.2. Size:367K  aosemi
 aot2618l.pdf

AOT2618L/AOB2618L/AOTF2618L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2618L & AOB2618L & AOTF2618L uses trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 23A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 9.3. Size:348K  aosemi
 aot2610l.pdf

 9.4. Size:424K  aosemi
 aot2618l aob2618l aotf2618l.pdf

AOT2618L/AOB2618L/AOTF2618L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2618L & AOB2618L & AOTF2618L uses trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 23A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 9.5. Size:421K  aosemi
 aot264l.pdf

AOT264L/AOB264L 60V N-Channel MOSFET General Description Product Summary VDS 60V The AOT264L/AOB264L combines advanced trench MOSFET technology with a low resistance package to ID (at VGS=10V) 140A provide extremely low RDS(ON).This device is ideal for RDS(ON) (at VGS=10V)

 9.6. Size:420K  aosemi
 aot2606l aob2606l aotf2606l.pdf

AOT2606L/AOB2606L/AOTF2606L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2606L & AOB2606L & AOTF2606L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 9.7. Size:348K  aosemi
 aot2610l aotf2610l.pdf

 9.8. Size:358K  aosemi
 aob264l aot264l.pdf

AOT264L/AOB264L 60V N-Channel MOSFET General Description Product Summary VDS 60V The AOT264L/AOB264L combines advanced trench MOSFET technology with a low resistance package to ID (at VGS=10V) 140A provide extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

 9.9. Size:289K  aosemi
 aot2608l.pdf

AOT2608L/AOB2608L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2608L/AOB2608L uses Trench MOSFET 60V ID (at VGS=10V) 72A technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 9.10. Size:358K  aosemi
 aot264l aob264l.pdf

AOT264L/AOB264L 60V N-Channel MOSFET General Description Product Summary VDS 60V The AOT264L/AOB264L combines advanced trench MOSFET technology with a low resistance package to ID (at VGS=10V) 140A provide extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

 9.11. Size:402K  aosemi
 aot260l aob260l.pdf

AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT(B)260L uses Trench MOSFET technology that VDS 60V is uniquely optimized to provide the most efficient high ID (at VGS=10V) 140A frequency switching performance. Power losses are RDS(ON) (at VGS=10V)

 9.12. Size:349K  aosemi
 aot2606l.pdf

AOT2606L/AOB2606L/AOTF2606L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2606L & AOB2606L & AOTF2606L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 9.13. Size:276K  aosemi
 aot260l.pdf

AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT(B)260L uses Trench MOSFET technology that VDS 60V is uniquely optimized to provide the most efficient high ID (at VGS=10V) 140A frequency switching performance. Power losses are RDS(ON) (at VGS=10V)

 9.14. Size:244K  inchange semiconductor
 aot262l.pdf

isc N-Channel MOSFET Transistor AOT262L FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and genera

 9.15. Size:245K  inchange semiconductor
 aot2618l.pdf

isc N-Channel MOSFET Transistor AOT2618L FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 19m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gener

 9.16. Size:261K  inchange semiconductor
 aot2610l.pdf

isc N-Channel MOSFET Transistor AOT2610L FEATURES Drain Current I = 55A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 10.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.17. Size:245K  inchange semiconductor
 aot264l.pdf

isc N-Channel MOSFET Transistor AOT264L FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

 9.18. Size:245K  inchange semiconductor
 aot2608l.pdf

isc N-Channel MOSFET Transistor AOT2608L FEATURES Drain Current I = 72A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

 9.19. Size:245K  inchange semiconductor
 aot260l.pdf

isc N-Channel MOSFET Transistor AOT260L FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 2.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene