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AOT266L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: AOT266L

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 268 W

Предельно допустимое напряжение сток-исток (Uds): 60 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 3.2 V

Максимально допустимый постоянный ток стока (Id): 140 A

Максимальная температура канала (Tj): 175 °C

Время нарастания (tr): 20 ns

Выходная емкость (Cd): 720 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0035 Ohm

Тип корпуса: TO-220

Аналог (замена) для AOT266L

 

 

AOT266L Datasheet (PDF)

1.1. aot266l.pdf Size:405K _aosemi

AOT266L
AOT266L

AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET General Description Product Summary VDS The AOT266L & AOB266L & AOTF266L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 140A/78A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 3.5mΩ (< 3.2mΩ∗) Both conduction and switching power losses are RDS(ON) (at VGS=6V

5.1. aot2606l.pdf Size:349K _aosemi

AOT266L
AOT266L

AOT2606L/AOB2606L/AOTF2606L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2606L & AOB2606L & AOTF2606L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 6.5mΩ (< 6.2mΩ∗) Both conduction and switching power losses are minimized due to a

5.2. aot264l.pdf Size:358K _aosemi

AOT266L
AOT266L

AOT264L/AOB264L 60V N-Channel MOSFET General Description Product Summary VDS 60V The AOT264L/AOB264L combines advanced trench MOSFET technology with a low resistance package to ID (at VGS=10V) 140A provide extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V) < 3.2mΩ (< 3.0mΩ∗) converters and synchronous rectifiers for consumer, RDS(ON) (at VGS = 6V) < 3.

 5.3. aot260l.pdf Size:276K _aosemi

AOT266L
AOT266L

AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT(B)260L uses Trench MOSFET technology that VDS 60V is uniquely optimized to provide the most efficient high ID (at VGS=10V) 140A frequency switching performance. Power losses are RDS(ON) (at VGS=10V) < 2.5mW minimized due to an extremely low combination of RDS(ON) (at VGS =6V) < 2.9mW RDS(ON) and Crss.

5.4. aot2608l.pdf Size:289K _aosemi

AOT266L
AOT266L

AOT2608L/AOB2608L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2608L/AOB2608L uses Trench MOSFET 60V ID (at VGS=10V) 72A technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 8.0mΩ (< 7.6mΩ∗) conduction and switching power losses are minimized due to an extremely low combinatio

 5.5. aot2610l.pdf Size:348K _aosemi

AOT266L
AOT266L

AOT2610L/AOTF2610L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2610L & AOTF2610L uses trench MOSFET 60V technology that is uniquely optimized to provide the most ID (at VGS=10V) 55A / 35A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 10.7mΩ conduction and switching power losses are minimized due RDS(ON) (at VGS=4.5V) < 13.5m

5.6. aot262l.pdf Size:333K _aosemi

AOT266L
AOT266L

AOT262L/AOB262L 60V N-Channel MOSFET General Description Product Summary VDS 60V • Trench Power MV MOSFET technology • Low RDS(ON) ID (at VGS=10V) 140A • Low Gate Charge RDS(ON) (at VGS=10V) < 3.0mΩ (< 2.8mΩ∗) • Optimized for fast-switching applications RDS(ON) (at VGS = 6V) < 3.2mΩ (< 3.0mΩ∗) Applications 100% UIS Tested 100% Rg Tested • Synchronus Rectif

5.7. aot2618l.pdf Size:367K _aosemi

AOT266L
AOT266L

AOT2618L/AOB2618L/AOTF2618L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2618L & AOB2618L & AOTF2618L uses trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 23A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 19mΩ Both conduction and switching power losses are RDS(ON) (at VGS=4.5V) < 25mΩ m

Другие MOSFET... AOT25S65 , AOT2606L , AOT2608L , AOT260L , AOT2610L , AOT2618L , AOT262L , AOT264L , IRF9540 , AOT270AL , AOT27S60 , AOT280L , AOT282L , AOT284L , AOT286L , AOT288L , AOT290L .

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MOSFET: IRFR13N20DPBF | IRFR13N15DPBF | IRFR130ATM | IRFR12N25DPBF | IRFR120ZPBF | IRFR120PBF | IRFR120NPBF | IRFR120ATM | IRFR1205PBF | IRFR110PBF | IRFR1018EPBF | IRFR1010ZPBF | IRFR024PBF | IRFR024NPBF | IRFR020PBF |