AOT280L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOT280L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 333 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 140 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 23 nS
Cossⓘ - Capacitancia de salida: 1315 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0027 Ohm
Encapsulados: TO-220
Búsqueda de reemplazo de AOT280L MOSFET
- Selecciónⓘ de transistores por parámetros
AOT280L datasheet
..1. Size:269K aosemi
aot280l aob280l.pdf 
AOT280L/AOB280L 80V N-Channel MOSFET General Description Product Summary VDS The AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)
..2. Size:269K aosemi
aot280l.pdf
AOT280L/AOB280L 80V N-Channel MOSFET General Description Product Summary VDS The AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)
..3. Size:245K inchange semiconductor
aot280l.pdf
isc N-Channel MOSFET Transistor AOT280L FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 2.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene
8.1. Size:488K aosemi
aot280a60l.pdf
AOTF280A60L/AOT280A60L/AOB280A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max
8.2. Size:488K aosemi
aotf280a60l aot280a60l aob280a60l.pdf
AOTF280A60L/AOT280A60L/AOB280A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max
9.3. Size:378K aosemi
aot284l.pdf
AOT284L/AOB284L 80V N-Channel MOSFET General Description Product Summary VDS The AOT284L & AOB284L uses trench MOSFET 80V technology that is uniquely optimized to provide the most ID (at VGS=10V) 105A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)
9.5. Size:390K aosemi
aot286l aob286l.pdf
AOT286L/AOB286L 80V N-Channel MOSFET General Description Product Summary VDS The AOT286L/AOB286L uses Trench MOSFET 80V ID (at VGS=10V) 70A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)
9.6. Size:285K aosemi
aot286l.pdf
AOT286L/AOB286L 80V N-Channel MOSFET General Description Product Summary VDS The AOT286L/AOB286L uses Trench MOSFET 80V ID (at VGS=10V) 70A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)
9.7. Size:363K aosemi
aot288l aob288l aotf288l.pdf
AOT288L/AOB288L/AOTF288L 80V N-Channel MOSFET General Description Product Summary VDS The AOT288L & AOB288L & AOTF288L uses trench 80V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
9.8. Size:363K aosemi
aot288l.pdf
AOT288L/AOB288L/AOTF288L 80V N-Channel MOSFET General Description Product Summary VDS The AOT288L & AOB288L & AOTF288L uses trench 80V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
9.10. Size:260K inchange semiconductor
aot282l.pdf
isc N-Channel MOSFET Transistor AOT282L FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
9.11. Size:245K inchange semiconductor
aot284l.pdf
isc N-Channel MOSFET Transistor AOT284L FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 4.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene
9.12. Size:245K inchange semiconductor
aot286l.pdf
isc N-Channel MOSFET Transistor AOT286L FEATURES Static drain-source on-resistance RDS(on) 6m Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Be ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. AB
9.13. Size:245K inchange semiconductor
aot288l.pdf
isc N-Channel MOSFET Transistor AOT288L FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 9.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gener
Otros transistores... AOT260L, AOT2610L, AOT2618L, AOT262L, AOT264L, AOT266L, AOT270AL, AOT27S60, SPP20N60C3, AOT282L, AOT284L, AOT286L, AOT288L, AOT290L, AOT2910L, AOT2916L, AOT2918L
