AOT280L Datasheet. Specs and Replacement
Type Designator: AOT280L 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 333 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 140 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 1315 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
Package: TO-220
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AOT280L datasheet
..1. Size:269K aosemi
aot280l aob280l.pdf 
AOT280L/AOB280L 80V N-Channel MOSFET General Description Product Summary VDS The AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V) ... See More ⇒
..2. Size:269K aosemi
aot280l.pdf
AOT280L/AOB280L 80V N-Channel MOSFET General Description Product Summary VDS The AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V) ... See More ⇒
..3. Size:245K inchange semiconductor
aot280l.pdf
isc N-Channel MOSFET Transistor AOT280L FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 2.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene... See More ⇒
8.1. Size:488K aosemi
aot280a60l.pdf
AOTF280A60L/AOT280A60L/AOB280A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
8.2. Size:488K aosemi
aotf280a60l aot280a60l aob280a60l.pdf
AOTF280A60L/AOT280A60L/AOB280A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
9.3. Size:378K aosemi
aot284l.pdf
AOT284L/AOB284L 80V N-Channel MOSFET General Description Product Summary VDS The AOT284L & AOB284L uses trench MOSFET 80V technology that is uniquely optimized to provide the most ID (at VGS=10V) 105A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) ... See More ⇒
9.5. Size:390K aosemi
aot286l aob286l.pdf
AOT286L/AOB286L 80V N-Channel MOSFET General Description Product Summary VDS The AOT286L/AOB286L uses Trench MOSFET 80V ID (at VGS=10V) 70A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V) ... See More ⇒
9.6. Size:285K aosemi
aot286l.pdf
AOT286L/AOB286L 80V N-Channel MOSFET General Description Product Summary VDS The AOT286L/AOB286L uses Trench MOSFET 80V ID (at VGS=10V) 70A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V) ... See More ⇒
9.7. Size:363K aosemi
aot288l aob288l aotf288l.pdf
AOT288L/AOB288L/AOTF288L 80V N-Channel MOSFET General Description Product Summary VDS The AOT288L & AOB288L & AOTF288L uses trench 80V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) ... See More ⇒
9.8. Size:363K aosemi
aot288l.pdf
AOT288L/AOB288L/AOTF288L 80V N-Channel MOSFET General Description Product Summary VDS The AOT288L & AOB288L & AOTF288L uses trench 80V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) ... See More ⇒
9.10. Size:260K inchange semiconductor
aot282l.pdf
isc N-Channel MOSFET Transistor AOT282L FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA... See More ⇒
9.11. Size:245K inchange semiconductor
aot284l.pdf
isc N-Channel MOSFET Transistor AOT284L FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 4.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene... See More ⇒
9.12. Size:245K inchange semiconductor
aot286l.pdf
isc N-Channel MOSFET Transistor AOT286L FEATURES Static drain-source on-resistance RDS(on) 6m Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Be ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. AB... See More ⇒
9.13. Size:245K inchange semiconductor
aot288l.pdf
isc N-Channel MOSFET Transistor AOT288L FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 9.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gener... See More ⇒
Detailed specifications: AOT260L, AOT2610L, AOT2618L, AOT262L, AOT264L, AOT266L, AOT270AL, AOT27S60, IRFP260, AOT282L, AOT284L, AOT286L, AOT288L, AOT290L, AOT2910L, AOT2916L, AOT2918L
Keywords - AOT280L MOSFET specs
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