AOT284L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOT284L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 250 W

Tensión drenaje-fuente (Vds): 80 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 105 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3.3 V

Tiempo de elevación (tr): 11 nS

Conductancia de drenaje-sustrato (Cd): 673 pF

Resistencia drenaje-fuente RDS(on): 0.0045 Ohm

Empaquetado / Estuche: TO-220

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AOT284L Datasheet (PDF)

1.1. aot284l.pdf Size:272K _aosemi

AOT284L/AOB284L 80V N-Channel MOSFET General Description Product Summary VDS The AOT284L & AOB284L uses trench MOSFET 80V technology that is uniquely optimized to provide the most ID (at VGS=10V) 105A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 4.5mΩ (< 4.3mΩ∗) conduction and switching power losses are minimized due RDS(ON) (at VGS=6V) < 5.7m�

5.1. aot282l.pdf Size:276K _aosemi

AOT282L/AOB282L 80V N-Channel MOSFET General Description Product Summary VDS The AOT282L & AOB282L uses trench MOSFET 80V technology that is uniquely optimized to provide the most ID (at VGS=10V) 105A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 3.5mΩ (< 3.2mΩ∗) conduction and switching power losses are minimized due RDS(ON) (at VGS=6V) < 5.2m�

5.2. aot280l.pdf Size:269K _aosemi

AOT280L/AOB280L 80V N-Channel MOSFET General Description Product Summary VDS The AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V) < 2.7mΩ (< 2.2mΩ∗) efficient high frequency switching performance. Both RDS(ON) (at VGS=6V) < 3.5mΩ (< 3.1mΩ∗) conduction and switching power losses are

5.3. aot288l.pdf Size:363K _aosemi

AOT288L/AOB288L/AOTF288L 80V N-Channel MOSFET General Description Product Summary VDS The AOT288L & AOB288L & AOTF288L uses trench 80V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 9.2mΩ(< 8.9mΩ*) Both conduction and switching power losses are RDS(ON) (at VGS=6V)

5.4. aot286l.pdf Size:285K _aosemi

AOT286L/AOB286L 80V N-Channel MOSFET General Description Product Summary VDS The AOT286L/AOB286L uses Trench MOSFET 80V ID (at VGS=10V) 70A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V) < 6.0mΩ (< 5.7mΩ∗) efficient high frequency switching performance. Both RDS(ON) (at VGS=6V) < 7.9mΩ (< 7.6mΩ∗) conduction and switching power losses are

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