Справочник MOSFET. AOT284L

 

AOT284L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOT284L
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 250 W
   Предельно допустимое напряжение сток-исток |Uds|: 80 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3.3 V
   Максимально допустимый постоянный ток стока |Id|: 105 A
   Максимальная температура канала (Tj): 175 °C
   Время нарастания (tr): 11 ns
   Выходная емкость (Cd): 673 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0045 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для AOT284L

 

 

AOT284L Datasheet (PDF)

 ..1. Size:272K  aosemi
aob284l aot284l.pdf

AOT284L
AOT284L

AOT284L/AOB284L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT284L & AOB284L uses trench MOSFET 80Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 105Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 ..2. Size:245K  inchange semiconductor
aot284l.pdf

AOT284L
AOT284L

isc N-Channel MOSFET Transistor AOT284LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 4.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

 9.1. Size:269K  aosemi
aot280l aob280l.pdf

AOT284L
AOT284L

AOT280L/AOB280L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 9.2. Size:276K  aosemi
aot282l.pdf

AOT284L
AOT284L

AOT282L/AOB282L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT282L & AOB282L uses trench MOSFET 80Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 105Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 9.3. Size:269K  aosemi
aot280l.pdf

AOT284L
AOT284L

AOT280L/AOB280L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 9.4. Size:285K  aosemi
aot286l.pdf

AOT284L
AOT284L

AOT286L/AOB286L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT286L/AOB286L uses Trench MOSFET 80V ID (at VGS=10V) 70Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 9.5. Size:363K  aosemi
aot288l.pdf

AOT284L
AOT284L

AOT288L/AOB288L/AOTF288L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT288L & AOB288L & AOTF288L uses trench 80VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 9.6. Size:260K  inchange semiconductor
aot282l.pdf

AOT284L
AOT284L

isc N-Channel MOSFET Transistor AOT282LFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

 9.7. Size:245K  inchange semiconductor
aot280l.pdf

AOT284L
AOT284L

isc N-Channel MOSFET Transistor AOT280LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 2.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

 9.8. Size:245K  inchange semiconductor
aot286l.pdf

AOT284L
AOT284L

isc N-Channel MOSFET Transistor AOT286LFEATURESStatic drain-source on-resistance:RDS(on) 6mFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSBe ideal for boost converters and synchronous rectifiers forconsumer, telecom, industrial power supplies and LED backlighting.AB

 9.9. Size:245K  inchange semiconductor
aot288l.pdf

AOT284L
AOT284L

isc N-Channel MOSFET Transistor AOT288LFEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 9.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top