Справочник MOSFET. AOT284L

 

AOT284L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOT284L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 105 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 673 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для AOT284L

 

 

AOT284L Datasheet (PDF)

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 aot284l.pdf

AOT284L AOT284L

AOT284L/AOB284L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT284L & AOB284L uses trench MOSFET 80Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 105Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 ..2. Size:272K  aosemi
 aob284l aot284l.pdf

AOT284L AOT284L

AOT284L/AOB284L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT284L & AOB284L uses trench MOSFET 80Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 105Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 ..3. Size:245K  inchange semiconductor
 aot284l.pdf

AOT284L AOT284L

isc N-Channel MOSFET Transistor AOT284LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 4.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

 9.1. Size:269K  aosemi
 aot280l aob280l.pdf

AOT284L AOT284L

AOT280L/AOB280L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 9.2. Size:276K  aosemi
 aot282l.pdf

AOT284L AOT284L

AOT282L/AOB282L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT282L & AOB282L uses trench MOSFET 80Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 105Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 9.3. Size:269K  aosemi
 aot280l.pdf

AOT284L AOT284L

AOT280L/AOB280L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 9.4. Size:285K  aosemi
 aot286l.pdf

AOT284L AOT284L

AOT286L/AOB286L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT286L/AOB286L uses Trench MOSFET 80V ID (at VGS=10V) 70Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 9.5. Size:488K  aosemi
 aot280a60l.pdf

AOT284L AOT284L

AOTF280A60L/AOT280A60L/AOB280A60LTM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max

 9.6. Size:363K  aosemi
 aot288l.pdf

AOT284L AOT284L

AOT288L/AOB288L/AOTF288L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT288L & AOB288L & AOTF288L uses trench 80VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 9.7. Size:260K  inchange semiconductor
 aot282l.pdf

AOT284L AOT284L

isc N-Channel MOSFET Transistor AOT282LFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

 9.8. Size:245K  inchange semiconductor
 aot280l.pdf

AOT284L AOT284L

isc N-Channel MOSFET Transistor AOT280LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 2.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

 9.9. Size:245K  inchange semiconductor
 aot286l.pdf

AOT284L AOT284L

isc N-Channel MOSFET Transistor AOT286LFEATURESStatic drain-source on-resistance:RDS(on) 6mFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSBe ideal for boost converters and synchronous rectifiers forconsumer, telecom, industrial power supplies and LED backlighting.AB

 9.10. Size:245K  inchange semiconductor
 aot288l.pdf

AOT284L AOT284L

isc N-Channel MOSFET Transistor AOT288LFEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 9.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener

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History: FDN86501LZ

 

 
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