AOT424 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOT424
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 35.5 nS
   Cossⓘ - Capacitancia de salida: 700 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO-220

Búsqueda de reemplazo de MOSFET AOT424

AOT424 Datasheet (PDF)

..1. Size:443K aosemi
aot424.pdf

AOT424N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT424 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and lowID = 110A (VGS = 10V)gate resistance. This device is ideally suited for use asRDS(ON)

..2. Size:818K cn vbsemi
aot424.pdf

AOT424www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0035 at VGS = 10 V 9830 82 nC0.0045 at VGS = 4.5 V 98APPLICATIONS OR-ingTO-220ABD Server DC/DCGSG D S N-Channel MOSFETTop ViewABSOL

..3. Size:260K inchange semiconductor
aot424.pdf

isc N-Channel MOSFET Transistor AOT424FEATURESDrain Current I = 110A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

9.1. Size:302K aosemi
aot42s60.pdf

AOT42S60/AOB42S60TM600V 37A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT42S60 & AOB42S60 have been fabricated using IDM 166Athe advanced MOSTM high voltage process that isdesigned to deliver high levels of performance and RDS(ON),max 0.109robustness in switching applications. Qg,typ 40nCBy providing low RDS(on), Qg and EOSS alo

9.2. Size:335K aosemi
aot42s60l.pdf

AOT42S60/AOTF42S60TM600V 39A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT42S60 & AOTF42S60 have been fabricated IDM 166Ausing the advanced MOSTM high voltage process that isdesigned to deliver high levels of performance and RDS(ON),max 0.099robustness in switching applications. Qg,typ 40nCBy providing low RDS(on), Q

9.3. Size:77K aosemi
aot428.pdf

AOT428N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT428 uses advanced trench technology and VDS (V) = 75Vdesign to provide excellent RDS(ON) with low gate ID = 80A (VGS = 10V)charge. This device is suitable for use in PWM, load RDS(ON)

9.4. Size:68K aosemi
aot426.pdf

AOT426N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT426 uses advanced trench technology and VDS (V) = 30Vdesign to provide excellent RDS(ON) with low gate ID = 85Acharge. This device is suitable for use in PWM, load RDS(ON)

9.5. Size:245K inchange semiconductor
aot42s60.pdf

isc N-Channel MOSFET Transistor AOT42S60FEATURESDrain Current I = 37A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 109m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

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