All MOSFET. AOT424 Datasheet

 

AOT424 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOT424
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 35.5 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO-220

 AOT424 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOT424 Datasheet (PDF)

 ..1. Size:443K  aosemi
aot424.pdf

AOT424
AOT424

AOT424N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT424 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and lowID = 110A (VGS = 10V)gate resistance. This device is ideally suited for use asRDS(ON)

 ..2. Size:818K  cn vbsemi
aot424.pdf

AOT424
AOT424

AOT424www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0035 at VGS = 10 V 9830 82 nC0.0045 at VGS = 4.5 V 98APPLICATIONS OR-ingTO-220ABD Server DC/DCGSG D S N-Channel MOSFETTop ViewABSOL

 ..3. Size:260K  inchange semiconductor
aot424.pdf

AOT424
AOT424

isc N-Channel MOSFET Transistor AOT424FEATURESDrain Current I = 110A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

 9.1. Size:302K  aosemi
aot42s60.pdf

AOT424
AOT424

AOT42S60/AOB42S60TM600V 37A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT42S60 & AOB42S60 have been fabricated using IDM 166Athe advanced MOSTM high voltage process that isdesigned to deliver high levels of performance and RDS(ON),max 0.109robustness in switching applications. Qg,typ 40nCBy providing low RDS(on), Qg and EOSS alo

 9.2. Size:335K  aosemi
aot42s60l.pdf

AOT424
AOT424

AOT42S60/AOTF42S60TM600V 39A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT42S60 & AOTF42S60 have been fabricated IDM 166Ausing the advanced MOSTM high voltage process that isdesigned to deliver high levels of performance and RDS(ON),max 0.099robustness in switching applications. Qg,typ 40nCBy providing low RDS(on), Q

 9.3. Size:77K  aosemi
aot428.pdf

AOT424
AOT424

AOT428N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT428 uses advanced trench technology and VDS (V) = 75Vdesign to provide excellent RDS(ON) with low gate ID = 80A (VGS = 10V)charge. This device is suitable for use in PWM, load RDS(ON)

 9.4. Size:68K  aosemi
aot426.pdf

AOT424
AOT424

AOT426N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT426 uses advanced trench technology and VDS (V) = 30Vdesign to provide excellent RDS(ON) with low gate ID = 85Acharge. This device is suitable for use in PWM, load RDS(ON)

 9.5. Size:245K  inchange semiconductor
aot42s60.pdf

AOT424
AOT424

isc N-Channel MOSFET Transistor AOT42S60FEATURESDrain Current I = 37A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 109m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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