AOT460 Todos los transistores

 ..1. Size:182K  aosemi
 aot460.pdf

AOT460 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT460/L uses advanced trench technology and VDS (V) = 60V design to provide excellent RDS(ON) with low gate ID = 85 A (VGS = 10V) charge. This device is suitable for use in UPS, high RDS(ON)

 ..2. Size:260K  inchange semiconductor
 aot460.pdf

isc N-Channel MOSFET Transistor AOT460 FEATURES Drain Current I =85A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

 9.1. Size:68K  aosemi
 aot462.pdf

AOT462 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT462 uses advanced trench technology and VDS (V) = 60V design to provide excellent RDS(ON) with low gate ID = 70A (VGS = 10V) charge. This device is suitable for use in UPS, high RDS(ON)

 9.2. Size:332K  aosemi
 aot462l.pdf

AOT462L/AOB462L 60V N-Channel MOSFET General Description Product Summary VDS 60V The AOT462L/AOB462L combines advanced trench MOSFET technology with a low resistance package to ID (at VGS=10V) 35A provide extremely low RDS(ON).This device is ideal for RDS(ON) (at VGS=10V)

 9.3. Size:247K  aosemi
 aot466l.pdf

AOT466L/AOB466L 60V N-Channel MOSFET General Description Product Summary VDS The AOT466L & AOB466L combines advanced trench 60V MOSFET technology with a low resistance package to 180A ID (at VGS=10V) provide extremely low RDS(ON).This device is ideal for

 9.4. Size:259K  inchange semiconductor
 aot462l.pdf

isc N-Channel MOSFET Transistor AOT462L FEATURES Drain Current I =35A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 18m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

 9.5. Size:260K  inchange semiconductor
 aot466l.pdf

isc N-Channel MOSFET Transistor AOT466L FEATURES Drain Current I =180A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 3.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose