AOT460 MOSFET. Datasheet pdf. Equivalent
Type Designator: AOT460
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 268 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 85 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 35 nS
Drain-Source Capacitance (Cd): 430 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm
Package: TO-220
AOT460 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOT460 Datasheet (PDF)
aot460.pdf
AOT460N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT460/L uses advanced trench technology and VDS (V) = 60Vdesign to provide excellent RDS(ON) with low gate ID = 85 A (VGS = 10V)charge. This device is suitable for use in UPS, high RDS(ON)
aot460.pdf
isc N-Channel MOSFET Transistor AOT460FEATURESDrain Current I =85A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
aot462.pdf
AOT462N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT462 uses advanced trench technology and VDS (V) = 60Vdesign to provide excellent RDS(ON) with low gate ID = 70A (VGS = 10V)charge. This device is suitable for use in UPS, high RDS(ON)
aot462l.pdf
AOT462L/AOB462L60V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AOT462L/AOB462L combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 35Aprovide extremely low RDS(ON).This device is ideal for RDS(ON) (at VGS=10V)
aot466l.pdf
AOT466L/AOB466L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT466L & AOB466L combines advanced trench 60VMOSFET technology with a low resistance package to 180A ID (at VGS=10V)provide extremely low RDS(ON).This device is ideal for
aot462l.pdf
isc N-Channel MOSFET Transistor AOT462LFEATURESDrain Current I =35A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
aot466l.pdf
isc N-Channel MOSFET Transistor AOT466LFEATURESDrain Current I =180A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SE80130GA
History: SE80130GA
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