AOT460 Datasheet and Replacement
Type Designator: AOT460
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 268 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 430 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO-220
AOT460 substitution
AOT460 Datasheet (PDF)
aot460.pdf
AOT460N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT460/L uses advanced trench technology and VDS (V) = 60Vdesign to provide excellent RDS(ON) with low gate ID = 85 A (VGS = 10V)charge. This device is suitable for use in UPS, high RDS(ON)
aot460.pdf
isc N-Channel MOSFET Transistor AOT460FEATURESDrain Current I =85A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
aot462.pdf
AOT462N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT462 uses advanced trench technology and VDS (V) = 60Vdesign to provide excellent RDS(ON) with low gate ID = 70A (VGS = 10V)charge. This device is suitable for use in UPS, high RDS(ON)
aot462l.pdf
AOT462L/AOB462L60V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AOT462L/AOB462L combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 35Aprovide extremely low RDS(ON).This device is ideal for RDS(ON) (at VGS=10V)
Datasheet: AOT412 , AOT414 , AOT416 , AOT418L , AOT424 , AOT42S60 , AOT430 , AOT440 , AO3407 , AOT462L , AOT466L , AOT470 , AOT472 , AOT474 , AOT480L , AOT482L , AOT4N60 .
Keywords - AOT460 MOSFET datasheet
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