AOT466L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOT466L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 333 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 25 V
Corriente continua de drenaje |Id|: 180 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 108 nC
Tiempo de subida (tr): 29 nS
Conductancia de drenaje-sustrato (Cd): 1076 pF
Resistencia entre drenaje y fuente RDS(on): 0.0039 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET AOT466L
AOT466L Datasheet (PDF)
aot466l.pdf
AOT466L/AOB466L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT466L & AOB466L combines advanced trench 60VMOSFET technology with a low resistance package to 180A ID (at VGS=10V)provide extremely low RDS(ON).This device is ideal for
aot466l.pdf
isc N-Channel MOSFET Transistor AOT466LFEATURESDrain Current I =180A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
aot462.pdf
AOT462N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT462 uses advanced trench technology and VDS (V) = 60Vdesign to provide excellent RDS(ON) with low gate ID = 70A (VGS = 10V)charge. This device is suitable for use in UPS, high RDS(ON)
aot462l.pdf
AOT462L/AOB462L60V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AOT462L/AOB462L combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 35Aprovide extremely low RDS(ON).This device is ideal for RDS(ON) (at VGS=10V)
aot460.pdf
AOT460N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT460/L uses advanced trench technology and VDS (V) = 60Vdesign to provide excellent RDS(ON) with low gate ID = 85 A (VGS = 10V)charge. This device is suitable for use in UPS, high RDS(ON)
aot462l.pdf
isc N-Channel MOSFET Transistor AOT462LFEATURESDrain Current I =35A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
aot460.pdf
isc N-Channel MOSFET Transistor AOT460FEATURESDrain Current I =85A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: HGD155N15S
