AOT466L Todos los transistores

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AOT466L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOT466L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 333 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 25 V

Tensión umbral compuerta-fuente Vgs(th): 5 V

Corriente continua de drenaje (Id): 180 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 29 nS

Conductancia de drenaje-sustrato (Cd): 1076 pF

Resistencia drenaje-fuente RDS(on): 0.0039 Ohm

Empaquetado / Estuche: TO-220

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AOT466L Datasheet (PDF)

1.1. aot466l.pdf Size:247K _aosemi

AOT466L
AOT466L

AOT466L/AOB466L 60V N-Channel MOSFET General Description Product Summary VDS The AOT466L & AOB466L combines advanced trench 60V MOSFET technology with a low resistance package to 180A ID (at VGS=10V) provide extremely low RDS(ON).This device is ideal for < 3.9mΩ RDS(ON) (at VGS=10V) boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies an

5.1. aot460.pdf Size:182K _aosemi

AOT466L
AOT466L

AOT460 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT460/L uses advanced trench technology and VDS (V) = 60V design to provide excellent RDS(ON) with low gate ID = 85 A (VGS = 10V) charge. This device is suitable for use in UPS, high RDS(ON) < 7.5mΩ (VGS = 10V) current switching applications. AOT460and AOT460L are electrically identical. 100

5.2. aot462l.pdf Size:332K _aosemi

AOT466L
AOT466L

AOT462L/AOB462L 60V N-Channel MOSFET General Description Product Summary VDS 60V The AOT462L/AOB462L combines advanced trench MOSFET technology with a low resistance package to ID (at VGS=10V) 35A provide extremely low RDS(ON).This device is ideal for RDS(ON) (at VGS=10V) < 18mΩ boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED

5.3. aot462.pdf Size:68K _aosemi

AOT466L
AOT466L

AOT462 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT462 uses advanced trench technology and VDS (V) = 60V design to provide excellent RDS(ON) with low gate ID = 70A (VGS = 10V) charge. This device is suitable for use in UPS, high RDS(ON) < 18mΩ (VGS = 10V) current switching applications. Standard Product AOT462 is Pb-free (meets ROHS & Son

Otros transistores... AOT416 , AOT418L , AOT424 , AOT42S60 , AOT430 , AOT440 , AOT460 , AOT462L , IRF9640 , AOT470 , AOT472 , AOT474 , AOT480L , AOT482L , AOT4N60 , AOT4S60 , AOT500 .

 


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