AOT466L
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOT466L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 333
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 180
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 108
nC
trⓘ - Rise Time: 29
nS
Cossⓘ -
Output Capacitance: 1076
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0039
Ohm
Package:
TO-220
AOT466L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOT466L
Datasheet (PDF)
..1. Size:247K aosemi
aot466l.pdf 
AOT466L/AOB466L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT466L & AOB466L combines advanced trench 60VMOSFET technology with a low resistance package to 180A ID (at VGS=10V)provide extremely low RDS(ON).This device is ideal for
..2. Size:260K inchange semiconductor
aot466l.pdf
isc N-Channel MOSFET Transistor AOT466LFEATURESDrain Current I =180A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
9.1. Size:68K aosemi
aot462.pdf
AOT462N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT462 uses advanced trench technology and VDS (V) = 60Vdesign to provide excellent RDS(ON) with low gate ID = 70A (VGS = 10V)charge. This device is suitable for use in UPS, high RDS(ON)
9.2. Size:332K aosemi
aot462l.pdf
AOT462L/AOB462L60V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AOT462L/AOB462L combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 35Aprovide extremely low RDS(ON).This device is ideal for RDS(ON) (at VGS=10V)
9.3. Size:182K aosemi
aot460.pdf
AOT460N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT460/L uses advanced trench technology and VDS (V) = 60Vdesign to provide excellent RDS(ON) with low gate ID = 85 A (VGS = 10V)charge. This device is suitable for use in UPS, high RDS(ON)
9.4. Size:259K inchange semiconductor
aot462l.pdf
isc N-Channel MOSFET Transistor AOT462LFEATURESDrain Current I =35A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
9.5. Size:260K inchange semiconductor
aot460.pdf
isc N-Channel MOSFET Transistor AOT460FEATURESDrain Current I =85A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
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