AOT474 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOT474
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 417 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 127 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 49.6 nC
   trⓘ - Tiempo de subida: 34 nS
   Cossⓘ - Capacitancia de salida: 507 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0113 Ohm
   Paquete / Cubierta: TO-220

Búsqueda de reemplazo de MOSFET AOT474

AOT474 Datasheet (PDF)

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aot474.pdf

AOT474/AOTF47475V N-Channel MOSFET General Description Product SummaryThe AOT474 and AOTF474 use a robust technology that 75VVDSis designed to provide efficient and reliable power 127A ID (TO220 at VGS=10V)conversion even in the most demanding applications, 47A ID (TO220FL at VGS=10V)including motor control. With low RDS(ON) and excellent

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aot474.pdf

isc N-Channel MOSFET Transistor AOT474FEATURESDrain Current I = 127A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R = 11.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

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aot470.pdf

AOT470/AOB470L75V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT470/AOB470L uses advanced trench technology 75Vand design to provide excellent RDS(ON) with low gate ID (at VGS=10V) 100Acharge. This device is suitable for use in PWM, load RDS(ON) (at VGS=10V)

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aot470 aob470l.pdf

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aot472.pdf

AOT472/AOTF47275V N-Channel MOSFETGeneral Description Product SummaryThe AOT472 and AOTF472 use a robust technology that 75VVDSis designed to provide efficient and reliable power 140A ID (TO220 at VGS=10V)conversion even in the most demanding applications, 53A ID (TO220FL at VGS=10V)including motor control. With low RDS(ON) and excellent

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aot470.pdf

isc N-Channel MOSFET Transistor AOT470FEATURESDrain Current I =100A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R = 10.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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aot472.pdf

Isc N-Channel MOSFET Transistor AOT472FEATURESWith To-220 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75 V

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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