Справочник MOSFET. AOT474

 

AOT474 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOT474
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 417 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 127 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 34 ns
   Cossⓘ - Выходная емкость: 507 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0113 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для AOT474

 

 

AOT474 Datasheet (PDF)

 ..1. Size:176K  aosemi
 aot474.pdf

AOT474 AOT474

AOT474/AOTF47475V N-Channel MOSFET General Description Product SummaryThe AOT474 and AOTF474 use a robust technology that 75VVDSis designed to provide efficient and reliable power 127A ID (TO220 at VGS=10V)conversion even in the most demanding applications, 47A ID (TO220FL at VGS=10V)including motor control. With low RDS(ON) and excellent

 ..2. Size:261K  inchange semiconductor
 aot474.pdf

AOT474 AOT474

isc N-Channel MOSFET Transistor AOT474FEATURESDrain Current I = 127A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R = 11.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 9.1. Size:305K  aosemi
 aot470.pdf

AOT474 AOT474

AOT470/AOB470L75V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT470/AOB470L uses advanced trench technology 75Vand design to provide excellent RDS(ON) with low gate ID (at VGS=10V) 100Acharge. This device is suitable for use in PWM, load RDS(ON) (at VGS=10V)

 9.2. Size:305K  aosemi
 aot470 aob470l.pdf

AOT474 AOT474

AOT470/AOB470L75V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT470/AOB470L uses advanced trench technology 75Vand design to provide excellent RDS(ON) with low gate ID (at VGS=10V) 100Acharge. This device is suitable for use in PWM, load RDS(ON) (at VGS=10V)

 9.3. Size:177K  aosemi
 aot472.pdf

AOT474 AOT474

AOT472/AOTF47275V N-Channel MOSFETGeneral Description Product SummaryThe AOT472 and AOTF472 use a robust technology that 75VVDSis designed to provide efficient and reliable power 140A ID (TO220 at VGS=10V)conversion even in the most demanding applications, 53A ID (TO220FL at VGS=10V)including motor control. With low RDS(ON) and excellent

 9.4. Size:259K  inchange semiconductor
 aot470.pdf

AOT474 AOT474

isc N-Channel MOSFET Transistor AOT470FEATURESDrain Current I =100A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R = 10.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.5. Size:206K  inchange semiconductor
 aot472.pdf

AOT474 AOT474

Isc N-Channel MOSFET Transistor AOT472FEATURESWith To-220 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75 V

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