AOT480L Todos los transistores

 

AOT480L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOT480L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 333 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 810 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: TO-220
 

 Búsqueda de reemplazo de AOT480L MOSFET

   - Selección ⓘ de transistores por parámetros

 

AOT480L Datasheet (PDF)

 ..1. Size:406K  aosemi
aot480l.pdf pdf_icon

AOT480L

AOT480L/AOB480L80V N-Channel MOSFETTMSDMOSGeneral Description Product Summary80VThe AOT480L & AOB480L is fabricated with SDMOSTM VDStrench technology that combines excellent RDS(ON) with low ID (at VGS=10V) 180Agate charge & low Qrr. The result is outstanding efficiency RDS(ON) (at VGS=10V)

 ..2. Size:259K  inchange semiconductor
aot480l.pdf pdf_icon

AOT480L

isc N-Channel MOSFET Transistor AOT480LFEATURESDrain Current I =180A@ T =25D CDrain Source Voltage-: V =80V(Min)DSSStatic Drain-Source On-Resistance: R = 4.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.1. Size:269K  aosemi
aot482l.pdf pdf_icon

AOT480L

AOT482L/AOB482L80V N-Channel MOSFETTMSDMOSGeneral Description Product Summary80VThe AOT482L/AOB482L is fabricated with SDMOSTM VDS105Atrench technology that combines excellent RDS(ON) with low I (at VGS=10V)D

 9.2. Size:261K  inchange semiconductor
aot482l.pdf pdf_icon

AOT480L

isc N-Channel MOSFET Transistor AOT482LFEATURESDrain Current I =105A@ T =25D CDrain Source Voltage-: V =80V(Min)DSSStatic Drain-Source On-Resistance: R = 7.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Otros transistores... AOT430 , AOT440 , AOT460 , AOT462L , AOT466L , AOT470 , AOT472 , AOT474 , AON6380 , AOT482L , AOT4N60 , AOT4S60 , AOT500 , AOT502 , AOT5N100 , AOT5N50 , AOT5N60 .

History: GSM2301S | AP9430AGYT-HF | 2SK2884B

 

 
Back to Top

 


 
.