AOT5N100 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOT5N100/AOTF5N1001000V,4A N-Channel MOSFETGeneral Description Product Summary VDS1100@150The AOT5N100 & AOTF5N100 are fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 4Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOT5N100FEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 4.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationABSOLUTE MAXIMUM RATINGS(T =25)aSY

AOT5N60600V,5A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT5N60 have been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver ID (at VGS=10V) 5Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

AOT5N50/AOTF5N50500V, 5A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT5N50 & AOTF5N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 5Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOT5N60FEATURESWith TO-220 packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV D

isc N-Channel MOSFET Transistor AOT5N50FEATURESDrain Current I = 5.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =1.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose