AOT5N100 MOSFET Datasheet: N-Ch, 1000V, 4A. Full specification with pinout and replacement list

AOT5N100 Specs and Replacement

   Type Designator: AOT5N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 195 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
   Package: TO-220

AOT5N100 substitution

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AOT5N100 datasheet

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AOT5N100/AOTF5N100 1000V,4A N-Channel MOSFET General Description Product Summary VDS 1100@150 The AOT5N100 & AOTF5N100 are fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 4A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) ... See More ⇒

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isc N-Channel MOSFET Transistor AOT5N100 FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 4.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒

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AOT5N60 600V,5A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT5N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 5A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V) ... See More ⇒

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AOT5N50/AOTF5N50 500V, 5A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT5N50 & AOTF5N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 5A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒